发明授权
- 专利标题： Method for manufacturing magnetic sensor apparatus
- 专利标题（中）： 磁传感器装置的制造方法
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申请号： US12068988申请日： 2008-02-14
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公开(公告)号： US07582489B2公开(公告)日： 2009-09-01
- 发明人: Kenichi Ao , Yasutoshi Suzuki , Hideya Yamadera , Norikazu Ohta , Hirofumi Funahashi
- 申请人： Kenichi Ao , Yasutoshi Suzuki , Hideya Yamadera , Norikazu Ohta , Hirofumi Funahashi
- 申请人地址： JP Kariya
- 专利权人： DENSO CORPORATION
- 当前专利权人： DENSO CORPORATION
- 当前专利权人地址： JP Kariya
- 代理机构： Posz Law Group, PLC
- 优先权： JP2002-337416 20021121; JP2002-337417 20021121; JP2003-058899 20030305; JP2003-058900 20030305; JP2003-073900 20030318
- 主分类号： H01L21/00
- IPC分类号： H01L21/00 ; G01B7/30
摘要：
A magnetic sensor apparatus includes a semiconductor substrate and a magnetic impedance device for detecting a magnetic field. The magnetic impedance device is disposed on the substrate. The magnetic sensor apparatus has minimum size and is made with low manufacturing cost. Here, the magnetic impedance device detects a magnetic field in such a manner that impedance of the device is changed in accordance with the magnetic filed when an alternating current is applied to the device and the impedance is measured by an external electric circuit.
公开/授权文献
- US20080145956A1 Method for manufacturing magnetic sensor apparatus 公开/授权日：2008-06-19
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