Invention Grant
- Patent Title: Solid state image pickup device and method of producing solid state image pickup device
- Patent Title (中): 固体摄像装置及固体摄像装置的制造方法
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Application No.: US11973237Application Date: 2007-10-05
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Publication No.: US07582503B2Publication Date: 2009-09-01
- Inventor: Takashi Abe , Nobuo Nakamura , Keiji Mabuchi , Tomoyuki Umeda , Hiroaki Fujita , Eiichi Funatsu , Hiroki Sato
- Applicant: Takashi Abe , Nobuo Nakamura , Keiji Mabuchi , Tomoyuki Umeda , Hiroaki Fujita , Eiichi Funatsu , Hiroki Sato
- Applicant Address: JP Tokyo
- Assignee: Sony Corporation
- Current Assignee: Sony Corporation
- Current Assignee Address: JP Tokyo
- Agency: Rockey, Depke & Lyons, LLC
- Agent Robert J. Depke
- Priority: JP2002-076081 20020319
- Main IPC: H01L21/00
- IPC: H01L21/00

Abstract:
Forming a back-illuminated type CMOS image sensor, includes process for formation of a registration mark on the wiring side of a silicon substrate during formation of an active region or a gate electrode. A silicide film using an active region may also be used for the registration mark. Thereafter, the registration mark is read from the back side by use of red light or near infrared rays, and registration of the stepper is accomplished. It is also possible to form a registration mark in a silicon oxide film on the back side (illuminated side) in registry with the registration mark on the wiring side, and to achieve the desired registration by use of the registration mark thus formed.
Public/Granted literature
- US20080102554A1 Solid state image pickup device and method of producing solid state image pickup device Public/Granted day:2008-05-01
Information query
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