发明授权
US07582939B2 Semiconductor diode, electronic component and voltage source inverter
失效
半导体二极管,电子元器件和电压源逆变器
- 专利标题: Semiconductor diode, electronic component and voltage source inverter
- 专利标题(中): 半导体二极管,电子元器件和电压源逆变器
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申请号: US10547175申请日: 2004-02-18
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公开(公告)号: US07582939B2公开(公告)日: 2009-09-01
- 发明人: Mark-Matthias Bakran , Hans-Günter Eckel
- 申请人: Mark-Matthias Bakran , Hans-Günter Eckel
- 申请人地址: DE München
- 专利权人: Siemens Aktiengesellschaft
- 当前专利权人: Siemens Aktiengesellschaft
- 当前专利权人地址: DE München
- 代理商 Henry M. Feiereisen; Ursula B. Day
- 优先权: DE10308313 20030226
- 国际申请: PCT/EP2004/001541 WO 20040218
- 国际公布: WO2004/077573 WO 20040910
- 主分类号: H01L29/76
- IPC分类号: H01L29/76 ; H01L29/94 ; H01L31/062 ; H01L29/74
摘要:
The invention relates to a semiconductor diode, an electronic component and to a voltage source converter. According to the invention, the semiconductor diode having at least one pn-transition can be switched between a first state and a second state. In comparison to the first state, the second state has a greater on-state resistance and a smaller accumulated charge, and the pn-transition is capable of blocking both in the first state as well as in the second state with at least one predetermined blocking ability. An MOS-controlled diode is hereby obtained in which the transition from the on-state to the blocking state is simplified and is thus not critical with regard to the temporal sequence of the control pulses.
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