发明授权
US07582945B2 Photo thin film transistor having photoconductive layer including chalcogenide element and unit cell of image sensor using the same
有权
具有光电导层的照片薄膜晶体管，包括硫属元素元素和使用其的图像传感器的单元
- 专利标题： Photo thin film transistor having photoconductive layer including chalcogenide element and unit cell of image sensor using the same
- 专利标题（中）： 具有光电导层的照片薄膜晶体管，包括硫属元素元素和使用其的图像传感器的单元
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申请号： US11481599申请日： 2006-07-06
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公开(公告)号： US07582945B2公开(公告)日： 2009-09-01
- 发明人: Ki Bong Song , Doo Hee Cho
- 申请人： Ki Bong Song , Doo Hee Cho
- 申请人地址： KR Daejeon
- 专利权人： Electronics and Telecommunications Research Institute
- 当前专利权人： Electronics and Telecommunications Research Institute
- 当前专利权人地址： KR Daejeon
- 代理机构： Ladas & Parry LLP
- 优先权： KR10-2005-0103427 20051031; KR10-2005-0124174 20051215
- 主分类号： H01L31/06
- IPC分类号： H01L31/06
摘要：
A photo thin film transistor having a photoconductive layer including a chalcogenide element and a unit cell of an image sensor using the same are provided. The photo thin film transistor includes a glass substrate; a photoconductive layer that is formed of GST including a chalcogenide element, is disposed on the glass substrate, and absorbs light and generates an optical current; a source electrode and a drain electrode that are formed on respective sides of the photoconductive layer and form a path for the optical current generated by the photoconductive layer; a gate insulating layer formed on the photoconductive layer; and a gate electrode that is formed on the gate insulating layer and turns the optical current on or off. The photo thin film transistor includes amorphous GST including a chalcogenide element forming a photoconductive layer, thereby providing very high photoconductivity.