公开(公告)号：US20070096242A1

公开(公告)日：2007-05-03

申请号：US11481599

申请日：2006-07-06

申请人： Ki Bong Song ,  Doo Hee Cho

发明人： Ki Bong Song ,  Doo Hee Cho

IPC分类号： H01L31/06

CPC分类号： H01L31/095

摘要： A photo thin film transistor having a photoconductive layer including a chalcogenide element and a unit cell of an image sensor using the same are provided. The photo thin film transistor includes a glass substrate; a photoconductive layer that is formed of GST including a chalcogenide element, is disposed on the glass substrate, and absorbs light and generates an optical current; a source electrode and a drain electrode that are formed on respective sides of the photoconductive layer and form a path for the optical current generated by the photoconductive layer; a gate insulating layer formed on the photoconductive layer; and a gate electrode that is formed on the gate insulating layer and turns the optical current on or off. The photo thin film transistor includes amorphous GST including a chalcogenide element forming a photoconductive layer, thereby providing very high photoconductivity.

摘要翻译： 提供具有包含硫属元素元素的光电导层和使用其的图像传感器的单元的光电薄膜晶体管。 所述光电薄膜晶体管包括玻璃基板; 在玻璃基板上设置由含有硫族化物元素的GST形成的光电导层，吸收光并产生光电流; 源电极和漏电极，形成在光电导层的两侧，并形成由光电导层产生的光电流的路径; 形成在光电导层上的栅极绝缘层; 以及形成在栅极绝缘层上并打开或关闭光电流的栅电极。 该光电薄膜晶体管包括含有形成光电导层的硫属元素元素的无定形GST，从而提供非常高的光电导率。

公开(公告)号：US07582945B2

公开(公告)日：2009-09-01

申请号：US11481599

申请日：2006-07-06

申请人： Ki Bong Song ,  Doo Hee Cho

发明人： Ki Bong Song ,  Doo Hee Cho

IPC分类号： H01L31/06

CPC分类号： H01L31/095

摘要： A photo thin film transistor having a photoconductive layer including a chalcogenide element and a unit cell of an image sensor using the same are provided. The photo thin film transistor includes a glass substrate; a photoconductive layer that is formed of GST including a chalcogenide element, is disposed on the glass substrate, and absorbs light and generates an optical current; a source electrode and a drain electrode that are formed on respective sides of the photoconductive layer and form a path for the optical current generated by the photoconductive layer; a gate insulating layer formed on the photoconductive layer; and a gate electrode that is formed on the gate insulating layer and turns the optical current on or off. The photo thin film transistor includes amorphous GST including a chalcogenide element forming a photoconductive layer, thereby providing very high photoconductivity.

摘要翻译： 提供具有包含硫属元素元素的光电导层和使用其的图像传感器的单元的光电薄膜晶体管。 所述光电薄膜晶体管包括玻璃基板; 在玻璃基板上设置由含有硫族化物元素的GST形成的光电导层，吸收光并产生光电流; 源电极和漏电极，形成在光电导层的两侧，并形成由光电导层产生的光电流的路径; 形成在光电导层上的栅极绝缘层; 以及形成在栅极绝缘层上并打开或关闭光电流的栅电极。 该光电薄膜晶体管包括含有形成光电导层的硫属元素元素的无定形GST，从而提供非常高的光电导率。

公开(公告)号：US08242677B2

公开(公告)日：2012-08-14

申请号：US13105345

申请日：2011-05-11

申请人： Hye Yong Chu ,  Jeong Ik Lee ,  Doo Hee Cho ,  Jun Han Han ,  Joo Won Lee ,  Jin Wook Shin ,  Jong Hee Lee

发明人： Hye Yong Chu ,  Jeong Ik Lee ,  Doo Hee Cho ,  Jun Han Han ,  Joo Won Lee ,  Jin Wook Shin ,  Jong Hee Lee

IPC分类号： H01J1/52 ,  H01J19/40

CPC分类号： H01L51/5203 ,  H01L51/524 ,  H01L51/5243 ,  H01L51/5246 ,  H01L2251/5361 ,  H01L2251/566

摘要： Provided is an organic light emitting diode (OLED) panel for lighting, including an organic layer emitting light by reaction in response to power supplied by a positive electrode and a negative electrode, a protection cap protecting the organic layer from external moisture and oxygen, a cover film attached to upper surfaces of the positive electrode and negative electrode, and serving as a ground for the positive electrode and the negative electrode, and a conductive metal layer grounding the positive electrode and the negative electrode to the cover film.

摘要翻译： 提供了一种用于照明的有机发光二极管（OLED）面板，包括响应于由正电极和负电极提供的电力进行反应而发光的有机层，保护有机层免受外部水分和氧气的保护帽， 覆盖膜附接到正极和负极的上表面，并且用作正极和负极的接地，导电金属层将正极和负极接地到覆盖膜。

公开(公告)号：US06785449B2

公开(公告)日：2004-08-31

申请号：US10213824

申请日：2002-08-06

申请人： Jong Moo Lee ,  Doo Hee Cho ,  Joon Tae Ahn ,  Myung Hyun Lee ,  Kyong Hon Kim

发明人： Jong Moo Lee ,  Doo Hee Cho ,  Joon Tae Ahn ,  Myung Hyun Lee ,  Kyong Hon Kim

IPC分类号： G02B642

CPC分类号： G02B6/2813 ,  G02B6/12002

摘要： The present invention relates to a multi-layer optical planar waveguide which is vertically coupled using multimode-interference couplers and to the method of manufacturing the same. The purpose of this invention is to increase the degree of integration on the multi-layer optical planar waveguide by applying the concept of via holes of the multi-layer printed circuit board (MLPCB) used in electronic circuits to the optical waveguide devices. According to the present invention, particularly, a multimode interference coupler of a stepped structure has the higher coupling ratio at relatively short length of interference than the usual multimode interference coupler. The present invention can implement a multimode interference coupler at a specialized spot while reducing evanescent field interference between the upper and lower optical waveguides out of the spot by separating the layers enough.

摘要翻译： 本发明涉及使用多模干扰耦合器垂直耦合的多层光学平面波导及其制造方法。 本发明的目的是通过将电子电路中使用的多层印刷电路板（MLPCB）的通孔的概念应用于光波导器件来增加多层光学平面波导上的集成度。 根据本发明，特别地，阶梯式结构的多模干涉耦合器具有比通常的多模干涉耦合器在相对短的干涉长度下具有更高的耦合比。 本发明可以在特定的位置实现多模干涉耦合器，同时通过将层分离足够的距离，将上下光波导之间的消逝场干扰减少出现点。

公开(公告)号：US20100243994A1

公开(公告)日：2010-09-30

申请号：US12555986

申请日：2009-09-09

申请人： Sung Min Yoon ,  Shin Hyuk Yang ,  Soon Woon Jung ,  Seung Youl Kang ,  Doo Hee Cho ,  Chun Won Byun ,  Chi Sun Hwang ,  Byoung Gon Yu ,  Kyoung Ik Cho

发明人： Sung Min Yoon ,  Shin Hyuk Yang ,  Soon Woon Jung ,  Seung Youl Kang ,  Doo Hee Cho ,  Chun Won Byun ,  Chi Sun Hwang ,  Byoung Gon Yu ,  Kyoung Ik Cho

IPC分类号： H01L27/115 ,  H01L51/10 ,  H01L29/12 ,  H01L21/8246

CPC分类号： H01L21/28291 ,  H01L29/78391 ,  H01L29/7869

摘要： Provided are a transparent nonvolatile memory thin film transistor (TFT) and a method of manufacturing the same. The memory TFT includes source and drain electrodes disposed on a transparent substrate. A transparent semiconductor thin layer is disposed on the source and drain electrodes and the transparent substrate interposed between the source and drain electrodes. An organic ferroelectric thin layer is disposed on the transparent semiconductor thin layer. A gate electrode is disposed on the organic ferroelectric thin layer in alignment with the transparent semiconductor thin layer. Thus, the transparent nonvolatile memory TFT employs the organic ferroelectric thin layer, the oxide semiconductor thin layer, and auxiliary insulating layers disposed above and below the organic ferroelectric thin layer, thereby enabling low-cost manufacture of a transparent nonvolatile memory device capable of a low-temperature process.

摘要翻译： 提供了一种透明非易失性存储器薄膜晶体管（TFT）及其制造方法。 存储TFT包括设置在透明基板上的源极和漏极。 透明半导体薄层设置在源电极和漏电极之间，并且透明基板设置在源极和漏极之间。 有机铁电薄层设置在透明半导体薄层上。 栅电极与透明半导体薄层对准地设置在有机铁电薄层上。 因此，透明非易失性存储器TFT采用有机铁电薄层，氧化物半导体薄层和设置在有机铁电薄层之上和之下的辅助绝缘层，从而能够低成本地制造能够低的透明非易失性存储器件 温度过程。

公开(公告)号：US20100006837A1

公开(公告)日：2010-01-14

申请号：US12496558

申请日：2009-07-01

申请人： Doo Hee Cho ,  Sang Hee Park ,  Chi Sun Hwang ,  Hye Yong Chu ,  Kyoung Ik Cho ,  Shin Hyuk Yang ,  Chun Won Byun ,  Eun Suk Park ,  Oh Sang Kwon ,  Min Ki Ryu ,  Jae Heon Shin ,  Woo Seok Cheong ,  Sung Mook Chung ,  Jeong Ik Lee

发明人： Doo Hee Cho ,  Sang Hee Park ,  Chi Sun Hwang ,  Hye Yong Chu ,  Kyoung Ik Cho ,  Shin Hyuk Yang ,  Chun Won Byun ,  Eun Suk Park ,  Oh Sang Kwon ,  Min Ki Ryu ,  Jae Heon Shin ,  Woo Seok Cheong ,  Sung Mook Chung ,  Jeong Ik Lee

IPC分类号： H01L29/786 ,  H01L21/336 ,  H01B1/08

CPC分类号： H01L29/7869 ,  C23C14/08 ,  H01L29/247

摘要： Provided are a composition for an oxide semiconductor thin film, a field effect transistor using the same and a method of fabricating the field effect transistor. The composition includes an aluminum oxide, a zinc oxide, an indium oxide and a tin oxide. The thin film formed of the composition is in amorphous phase. The field effect transistor having an active layer formed of the composition can have an improved electrical characteristic and be fabricated by a low temperature process.

摘要翻译： 提供了一种用于氧化物半导体薄膜的组合物，使用该组合物的场效应晶体管和制造场效应晶体管的方法。 该组合物包括氧化铝，氧化锌，氧化铟和氧化锡。 由组合物形成的薄膜是非晶相。 具有由组合物形成的有源层的场效应晶体管可以具有改进的电特性并通过低温工艺制造。

公开(公告)号：US06916753B2

公开(公告)日：2005-07-12

申请号：US10331353

申请日：2002-12-31

申请人： Doo Hee Cho ,  Yong Gyu Choi ,  Hong Seok Seo ,  Bong Je Park

发明人： Doo Hee Cho ,  Yong Gyu Choi ,  Hong Seok Seo ,  Bong Je Park

IPC分类号： C03C3/112 ,  C03C3/06 ,  C03C3/11 ,  C03C4/00 ,  C03C13/04 ,  C03C4/12

CPC分类号： C03C3/11 ,  C03C3/06 ,  C03C4/0071 ,  C03C13/046

摘要： The present invention is a thulium doped silicate glass having an excellent fluorescent emission in the 1.4 μm band, and the usage thereof. The silicate glass of this invention includes: 65˜95 mol % SiO2; 0.5˜30 mol % bivalent metal oxide consisting of one or more material selected from ZnO, BaO, SrO and PbO; and 1˜15 mol % of SnO2 or TiO2, wherein 3˜30 mol % oxygen of the glass composition are replaced with fluorine, and 0.01˜1 mol % of thulium ions are doped, and the fluorescence lifetime of the 3H4 level of the Tm3+ is more than 50 μs. The silicate glass can be easily formed into a waveguide, such as optical fiber, and it has an excellent ability to splice with the optical fiber for transmission. They have excellent chemical durability and the characteristic of 1.4 μm band fluorescent emission by suppressing the non-radiative transition through multi-phonon relaxation. Thus they have long fluorescence lifetime of the 3H4 of Tm3+.

摘要翻译： 本发明是在1.4mum带中具有优异的荧光发射的掺doped硅酸盐玻璃及其用途。 本发明的硅酸盐玻璃包括：65〜95摩尔％的SiO 2; 由选自ZnO，BaO，SrO和PbO的一种或多种材料组成的0.5〜30mol％的二价金属氧化物; 和1〜15mol％的SnO 2或TiO 2，其中3〜30mol％的玻璃组合物的氧被氟代替，0.01〜1mol％的 ium离子被掺杂，并且Tm 3+ 3+的“3”4“4”水平的荧光寿命大于50微米。 硅酸盐玻璃可以容易地形成诸如光纤的波导，并且具有极好的与光纤进行接合的传输能力。 它们通过抑制通过多声子弛豫的非辐射跃迁具有优异的化学耐久性和1.4mum带荧光发射的特征。 因此，它们具有Tm 3+ 3+的3 H 4 H 4的长荧光寿命。

公开(公告)号：US06853480B2

公开(公告)日：2005-02-08

申请号：US10329501

申请日：2002-12-27

申请人： Yong Gyu Choi ,  Bong Je Park ,  Hong Seok Seo ,  Doo Hee Cho ,  Kyong Hon Kim ,  Tae Hoon Lee ,  Jong Heo

发明人： Yong Gyu Choi ,  Bong Je Park ,  Hong Seok Seo ,  Doo Hee Cho ,  Kyong Hon Kim ,  Tae Hoon Lee ,  Jong Heo

IPC分类号： G02B6/00 ,  H01S3/094 ,  H01S3/16 ,  H01S3/00

CPC分类号： H01S3/094003 ,  H01S3/161

摘要： The present invention relates to a main wavelength band of a pump light source capable of improving the pump efficiency while using 1.6 μm fluorescence emitted from Ho3+:5I5→5I7 transition as an optical amplifier, and an assistant pump wavelength band capable of accomplishing population inversion between 5I5 level and 5I7 level to improve the signal gain characteristics of such amplifier. The optical amplifier using optical materials to which holmium or holmium and terbium, holmium and europium, holmium and neodymium or holmium and dysprosium, etc. are doped can be pumped using a light source that emits light of 11,200˜11,500 cm−1 or a light source that emits light of 6,000˜6,500 cm−1.

摘要翻译： 本发明涉及一种泵浦光源的主波长带，能够提高泵效率，同时使用从Ho 3+发射的1.6μm荧光作为光放大器，以及 能够实现<5> I5电平和<5> I7电平之间的总体反转的辅助泵波长带，以改善这种放大器的信号增益特性。 使用掺杂有钬或钬和铽，钬和铕，钬和钕或钬和镝等的光学材料的光放大器可以使用发射11,200〜11500cm -1的光的光源来泵浦，或 发出6,000〜6,500厘米-1的光的光源。

公开(公告)号：US20090261389A1

公开(公告)日：2009-10-22

申请号：US12331688

申请日：2008-12-10

申请人： Doo Hee Cho ,  Shin Hyuk Yang ,  Chun Won Byun ,  Chi Sun Hwang ,  Hye Yong Chu ,  Kyoung Ik Cho

发明人： Doo Hee Cho ,  Shin Hyuk Yang ,  Chun Won Byun ,  Chi Sun Hwang ,  Hye Yong Chu ,  Kyoung Ik Cho

IPC分类号： H01L29/78 ,  H01L21/8232 ,  H01B1/02

CPC分类号： H01L29/7869 ,  H01L29/66969

摘要： A composition for an oxide semiconductor thin film, a field effect transistor (FET) using the composition, and a method of fabricating the FET are provided. The composition includes an aluminum oxide, a zinc oxide, and a tin oxide. The thin film formed of the composition remains in amorphous phase at a temperature of 400° C or less. The FET using an active layer formed of the composition has improved electrical characteristics and can be fabricated using a low-temperature process without expensive raw materials, such as In and Ga.

摘要翻译： 提供了一种用于氧化物半导体薄膜的组合物，使用该组合物的场效应晶体管（FET）及其制造方法。 该组合物包括氧化铝，氧化锌和氧化锡。 由组合物形成的薄膜在400℃以下的温度下保持非晶相。 使用由组合物形成的有源层的FET具有改善的电特性，并且可以使用低温工艺制造而不昂贵的原料，例如In和Ga。

公开(公告)号：US06769274B2

公开(公告)日：2004-08-03

申请号：US10033126

申请日：2001-12-26

申请人： Doo Hee Cho ,  Joon Tae Ahn ,  Min Yong Jeon ,  Kyong Hon Kim

发明人： Doo Hee Cho ,  Joon Tae Ahn ,  Min Yong Jeon ,  Kyong Hon Kim

IPC分类号： C03B2703

CPC分类号： G02B6/136 ,  C03C21/005 ,  G02B6/1345 ,  G02B2006/12083

摘要： The present invention relates to a method of manufacturing a waveguide using an ion exchange process. The present invention controls the refractive index and the thickness of a surface layer on a glass substrate using an ion exchange process, forms the waveguide pattern on the surface layer by means of photolithography and etching process and coats with materials having the refractive index same to or lower than that of the glass substrate to form a cladding layer. Accordingly, the present invention can manufacture a planar waveguide, which is excellent in dimension control and reproducibility and has a sharp step wall.

摘要翻译： 本发明涉及使用离子交换法制造波导的方法。 本发明使用离子交换工艺控制玻璃基板上的表面层的折射率和厚度，通过光刻和蚀刻工艺在表面层上形成波导图案，并用与折射率相同或相当于 低于玻璃基板以形成包覆层。 因此，本发明可以制造尺寸控制和再现性优异并且具有尖锐阶梯壁的平面波导。