发明授权
- 专利标题： Semiconductor chip having gettering layer, and method for manufacturing the same
- 专利标题（中）： 具有吸杂层的半导体芯片及其制造方法
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申请号： US11190011申请日： 2005-07-27
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公开(公告)号： US07582950B2公开(公告)日： 2009-09-01
- 发明人: Kazuhito Matsukawa , Tsuyoshi Koga , Akio Nishida , Yoshiko Higashide , Jun Shibata , Hiroshi Tobimatsu
- 申请人： Kazuhito Matsukawa , Tsuyoshi Koga , Akio Nishida , Yoshiko Higashide , Jun Shibata , Hiroshi Tobimatsu
- 申请人地址： JP Tokyo
- 专利权人： Renesas Technology Corp.
- 当前专利权人： Renesas Technology Corp.
- 当前专利权人地址： JP Tokyo
- 代理机构： Oblon, Spivak, McClelland, Maier & Neustadt, P.C.
- 优先权： JP2004-220319 20040728
- 主分类号： H01L29/06
- IPC分类号： H01L29/06
摘要：
In a semiconductor chip A wherein an element layer 2 having transistors and the like is formed on the front face, and the back face is joined to an underlying member, such as a package substrate, the thickness T is made 100 μm or less, and thereafter, a gettering layer 3 is formed on the back face of the semiconductor chip A. The gettering layer 3 is formed, for example, by polishing the back face of said semiconductor chip A using a polishing machine. Thereby, the yield of devices can be improved in the step for assembling the package.
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