Invention Grant
US07582970B2 Carbon containing silicon oxide film having high ashing tolerance and adhesion
失效
含碳氧化硅膜具有高的灰化耐受性和粘附性
- Patent Title: Carbon containing silicon oxide film having high ashing tolerance and adhesion
- Patent Title (中): 含碳氧化硅膜具有高的灰化耐受性和粘附性
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Application No.: US12180652Application Date: 2008-07-28
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Publication No.: US07582970B2Publication Date: 2009-09-01
- Inventor: Sadayuki Ohnishi , Kouichi Owto , Tatsuya Usami , Noboru Morita , Kouji Arita , Ryouhei Kitao , Youichi Sasaki
- Applicant: Sadayuki Ohnishi , Kouichi Owto , Tatsuya Usami , Noboru Morita , Kouji Arita , Ryouhei Kitao , Youichi Sasaki
- Applicant Address: JP Kawasaki
- Assignee: NEC Electronics Corporation
- Current Assignee: NEC Electronics Corporation
- Current Assignee Address: JP Kawasaki
- Agency: Katten Muchin Rosenman LLP
- Priority: JP2003-021078 20030129; JP2004-018080 20040127
- Main IPC: H01L23/48
- IPC: H01L23/48
Abstract:
A semiconductor device includes an interlayer insulating film formed on or over a semiconductor substrate. An opening is formed in the interlayer insulating film and reaches a lower layer metal wiring conductor. A metal plug is formed by filling the opening with Cu containing metal via a barrier metal. The interlayer insulating film includes the insulating film which includes a carbon containing silicon oxide (SiOCH) film which has Si—CH2 bond in the carbon containing silicon oxide film. The proportion of Si—CH2 bond (1360 cm-1) to Si—CH3 bond (1270 cm-1) in the insulating film is in a range from 0.03 to 0.05 measured as a peak height ratio of FTIR spectrum.
Public/Granted literature
- US20080290522A1 CARBON CONTAINING SILICON OXIDE FILM HAVING HIGH ASHING TOLERANCE AND ADHESION Public/Granted day:2008-11-27
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