A magnetic memory device includes a first signal line (BL) and a second signal line (/BL) extended column-wise; a third signal line (WL) extended row-wise; a memory cell including a first parallelly connected set which is disposed at the intersection of the first signal line and the third signal line, including a first magnetoresistive effect element (MTJ1) and a first select transistor (Tr1) and having one end connected to the first signal line; a second parallelly connected set which is disposed at the intersection of the second signal line and the third signal line, including a second magnetoresistive effect element (MTJ2) and a second select transistor (Tr2) and having one end connected to the second signal line; and a read circuit connected to the first signal line and the second signal line, for reading information memorized in the memory cell, based on voltages of the first signal line and the second signal line.