利索-全球专利检索

  1. 登录
  2. 注册

搜索结果

151 条记录 (耗时 0.029 秒)

    SEMICONDUCTOR MEMORY AND SYSTEM
    1.
    发明申请
    SEMICONDUCTOR MEMORY AND SYSTEM 有权
    半导体存储器和系统

    公开(公告)号：US20120087172A1

    公开(公告)日：2012-04-12

    申请号：US13240492

    申请日：2011-09-22

    申请人： Masaki Aoki

    发明人： Masaki Aoki

    IPC分类号： G11C11/00

    CPC分类号： G11C13/003 ,  G11C11/16 ,  G11C11/1659 ,  G11C11/1673 ,  G11C11/1675 ,  G11C13/0004 ,  G11C13/0007 ,  G11C13/004 ,  G11C29/021 ,  G11C29/028 ,  G11C2213/79

    摘要： A semiconductor memory includes a real memory cell including a selection transistor and a resistance variable element which are connected in series between a first voltage line and a second voltage line through a connection node, a real amplification transistor having a gate connected to the connection node, a source connected to a reference voltage line, and a drain connected to a real read line, and a sense amplifier to determine a logic held in the real memory cell by receiving a voltage of the real read line varied with a voltage generated in the connection node by resistance dividing between a source/drain resistance of the selection transistor, and the resistance variable element, the selection transistor receiving a read control voltage at the gate thereof.

    摘要翻译： 半导体存储器包括：实际存储单元，包括通过连接节点串联连接在第一电压线和第二电压线之间的选择晶体管和电阻可变元件，具有连接到连接节点的栅极的实际放大晶体管， 连接到参考电压线的源极和连接到实际读取线的漏极，以及读出放大器，用于通过接收由连接中产生的电压而变化的真实读取线的电压来确定保持在实际存储单元中的逻辑 所述选择晶体管在所述栅极处接收读取控制电压，所述选择晶体管在所述栅极处接收读取控制电压。

    MAGNETIC RANDOM ACCESS MEMORY
    2.
    发明申请
    MAGNETIC RANDOM ACCESS MEMORY 审中-公开
    磁性随机存取存储器

    公开(公告)号：US20100208515A1

    公开(公告)日：2010-08-19

    申请号：US12702847

    申请日：2010-02-09

    申请人： Masaki Aoki ,  Lee Young Min

    发明人： Masaki Aoki ,  Lee Young Min

    IPC分类号： G11C11/14 ,  G11C11/416 ,  H01L29/82

    CPC分类号： H01L27/228 ,  B82Y25/00 ,  G11C11/161 ,  G11C11/1659 ,  G11C11/1673 ,  G11C11/1675 ,  H01F10/3254 ,  H01L43/08

    摘要： The spin torque transfer magnetic random access memory includes a magnetic tunnel junction element including a pinned layer, a free layer, and a tunnel insulating film formed between the pinned layer and the free layer, and a memory cell select transistor having one diffused region electrically connected to a side of the fee layer of the magnetic tunnel junction element.

    摘要翻译： 自旋转矩传递磁随机存取存储器包括磁性隧道结元件，其包括形成在被钉扎层和自由层之间的钉扎层，自由层和隧道绝缘膜，以及存储单元选择晶体管，其具有电连接的一个扩散区域 到磁性隧道结元件的费用层的一侧。

    Magnetic memory device and method for reading the same
    3.
    发明授权
    Magnetic memory device and method for reading the same 有权
    磁记忆装置及其读取方法

    公开(公告)号：US07489577B2

    公开(公告)日：2009-02-10

    申请号：US11808967

    申请日：2007-06-14

    申请人： Yoshihiro Sato ,  Masaki Aoki

    发明人： Yoshihiro Sato ,  Masaki Aoki

    IPC分类号： G11C7/02

    CPC分类号： G11C11/16

    摘要： A magnetic memory device comprises a plurality of bit lines BL; memory cells MC disposed at the respective plurality of bit lines, and each including a magnetoresistive effect element MTJ whose resistance value is changed with changes of magnetization direction, and a select transistor Tr connected to the magnetoresistive effect element MTJ, the magnetoresistive effect element MC having one terminal connected to the bit line BL and the other terminal connected to a first signal line GND via the select transistor; dummy cells DC disposed at the respective plurality of bit lines BL, and each including a resistance element R of a constant resistance value, the resistance element having one terminal connected to the bit line BL and the other terminal connected to a second signal line SIGD; and a voltage sense amplifier SA connected to the plurality of bit lines BL.

    摘要翻译： 磁存储器件包括多个位线BL; 存储单元MC设置在相应的多个位线处，并且每个存储单元MC包括电阻值随着磁化方向的变化而变化的磁阻效应元件MTJ以及连接到磁阻效应元件MTJ的选择晶体管Tr，磁阻效应元件MC具有 一个端子连接到位线BL，另一个端子经由选择晶体管连接到第一信号线GND; 设置在各个位线BL上的虚设单元DC，并且每个都包括具有恒定电阻值的电阻元件R，该电阻元件具有连接到位线BL的一个端子，而另一个端子连接到第二信号线SIGD; 以及连接到多个位线BL的电压检测放大器SA。

    Plasma display device and method of preparing phosphor
    4.
    发明授权
    Plasma display device and method of preparing phosphor 失效
    等离子体显示装置及其制备方法

    公开(公告)号：US07486010B2

    公开(公告)日：2009-02-03

    申请号：US10517262

    申请日：2004-02-18

    申请人： Kazuhiko Sugimoto ,  Junichi Hibino ,  Masaki Aoki ,  Yoshinori Tanaka ,  Hiroshi Setoguchi

    发明人： Kazuhiko Sugimoto ,  Junichi Hibino ,  Masaki Aoki ,  Yoshinori Tanaka ,  Hiroshi Setoguchi

    IPC分类号： C09K11/08 ,  C09K11/64 ,  H01J17/49

    CPC分类号： C09K11/7734 ,  H01J2211/42

    摘要： In a phosphor whose host crystal is constituted of an oxide, a method of preparing the phosphor where the oxygen deficiencies in the phosphor are not many, and a plasma display device using the same are provided. After processes of weighing, mixing and filling powders of the phosphor, a process for firing in a reducing atmosphere and a process for firing in an oxidizing atmosphere after the last reducing atmosphere process are provided. In addition, a firing temperature in the oxidizing atmosphere process is not less than 600° C. and not more than 1000° C.

    摘要翻译： 在主晶体由氧化物构成的荧光体中，提供了荧光体中的氧缺乏量不多的荧光体的制造方法和使用该荧光体的等离子体显示装置。 在进行称重，混合和填充荧光体粉末的工艺之后，提供在还原气氛中焙烧的方法和在最后的还原气氛处理之后在氧化气氛中烧制的方法。 此外，氧化气氛中的烧成温度为600℃以上1000℃以下

    Process for producing phosphor and plasma display panel unit
    7.
    发明授权
    Process for producing phosphor and plasma display panel unit 失效
    磷光体和等离子体显示面板单元的制造方法

    公开(公告)号：US07192325B2

    公开(公告)日：2007-03-20

    申请号：US10512443

    申请日：2004-02-19

    申请人： Kazuhiko Sugimoto ,  Junichi Hibino ,  Masaki Aoki ,  Yoshinori Tanaka ,  Hiroshi Setoguchi

    发明人： Kazuhiko Sugimoto ,  Junichi Hibino ,  Masaki Aoki ,  Yoshinori Tanaka ,  Hiroshi Setoguchi

    IPC分类号： H01J9/00

    CPC分类号： C09K11/7734 ,  H01J2211/42

    摘要： Fine particles of a phosphor are weighed, mixed, and filled. Provided after this step are at least one step of firing the particles in a reducing atmosphere, and a step of pulverizing, dispersing, rinsing, drying and then performing oxygen ion implantation treatment for implanting oxygen ions and annealing the particles, after the step of treatment in the reducing atmosphere. This method recovers oxygen vacancy in the host crystal of the phosphor.

    摘要翻译： 称量，混合和填充磷光体的细颗粒。 在该步骤之后提供在还原气氛中烧成颗粒的至少一个步骤，以及在处理步骤之后粉碎，分散，漂洗，干燥然后进行氧离子注入处理以注入氧离子和退火颗粒的步骤 在还原气氛中。 该方法回收磷光体的主晶体中的氧空位。

    Plasma display and method for producing phosphor used therein
    8.
    发明申请
    Plasma display and method for producing phosphor used therein 失效
    等离子显示器及其中使用的荧光体的制造方法

    公开(公告)号：US20060072301A1

    公开(公告)日：2006-04-06

    申请号：US10537156

    申请日：2004-09-24

    申请人： Yuichiro Miyamae ,  Masaki Aoki ,  Kazuhiko Sugimoto ,  Keiji Horikawa ,  Junichi Hibino ,  Tanaka Yoshinori ,  Setoguchi Hiroshi

    发明人： Yuichiro Miyamae ,  Masaki Aoki ,  Kazuhiko Sugimoto ,  Keiji Horikawa ,  Junichi Hibino ,  Tanaka Yoshinori ,  Setoguchi Hiroshi

    IPC分类号： F21V9/16

    CPC分类号： C09K11/592 ,  C09K11/7734 ,  C09K11/7797 ,  H01J2211/42

    摘要： The present invention relates to a plasma display device and to a method of producing a phosphor to be used for the device, that prevents the phosphor layer from deteriorating, and improves the luminance, life, and reliability, of a PDP. The plasma display device is equipped with a plasma display panel in which a plurality of discharge cells are arranged, phosphor layers (110R, 110G, 110B) in color corresponding to each discharge cell are disposed, and phosphor layers (110R, 110G, 110B) are excited by ultraviolet light to emit light. Green phosphor layer (110G) has a green phosphor including Zn2SiO4:Mn, the element ratio of zinc (Zn) to silicon (Si) at the proximity of its surface is 2/1, which is the stoichiometric ratio, and the layer is positively charged or zero-charged.

    摘要翻译： 等离子体显示装置及其制造方法技术领域本发明涉及等离子体显示装置及其制造方法，该方法是防止荧光体层劣化，提高PDP的亮度，寿命和可靠性。 等离子体显示装置配备有配置有多个放电单元的等离子体显示面板，配置与各放电单元对应的颜色的荧光体层（110R，110G，110B），荧光体层（110R， 110G，110B）被紫外线激发以发光。 绿色荧光体层（110G）具有包含Zn 2 SiO 4·Mn的绿色荧光体，锌（Zn）与硅（Si）的接近的元素比例 其表面为化学计量比为2/1，层为正电荷或零电荷。