发明授权
- 专利标题： Photoresist strip method for low-k dielectrics
- 专利标题（中）： 用于低k电介质的光刻胶剥离方法
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申请号： US11859727申请日： 2007-09-21
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公开(公告)号： US07585777B1公开(公告)日： 2009-09-08
- 发明人: Haruhiro Harry Goto , Ilia Kalinovski , Khalid Mohamed
- 申请人： Haruhiro Harry Goto , Ilia Kalinovski , Khalid Mohamed
- 申请人地址： US CA San Jose
- 专利权人： Novellus Systems, Inc.
- 当前专利权人： Novellus Systems, Inc.
- 当前专利权人地址： US CA San Jose
- 代理机构： Weaver Austin Villeneuve & Sampson LLP
- 主分类号： H01L21/302
- IPC分类号： H01L21/302 ; H01L21/461
摘要：
The present invention pertains to methods for removing unwanted material from a semiconductor wafer during wafer manufacturing. More specifically, the invention pertains to stripping photo-resist material and removing etch-related residues from a semiconductor wafer. Methods involve implementing a plasma operation using hydrogen and a weak oxidizing agent, such as carbon dioxide. The invention is effective at stripping photo-resist and removing residues from low-k dielectric material used in Damascene devices.
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