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公开(公告)号：US20120108072A1
公开(公告)日：2012-05-03
申请号：US12916269
申请日：2010-10-29
申请人： Ivelin A. Angelov , James E. Caron , Ilia Kalinovski , Zhao Li
发明人： Ivelin A. Angelov , James E. Caron , Ilia Kalinovski , Zhao Li
IPC分类号： H01L21/3065 , G03B27/42 , B05B1/14 , H01L21/02 , C23F1/08
CPC分类号： G03B27/42 , C23C16/45565 , G03F7/427 , H01J37/32449
摘要： Apparatus, devices, and methods for increasing the ion energy in a plasma processing devices are provided. In various embodiments, the surface area of a showerhead facing the work piece includes a plurality of features. The plurality of features increases the surface area of the showerhead relative to a flat surface. Increasing the surface area of the showerhead increases the ion energy without increasing the power used to generate the plasma. Increasing the ion energy using such a showerhead allows for the broader application of plasma processes in integrated circuit manufacturing.
摘要翻译： 提供了用于增加等离子体处理装置中的离子能量的装置，装置和方法。 在各种实施例中，面向工件的喷头的表面积包括多个特征。 多个特征增加了喷头相对于平坦表面的表面积。 增加喷头的表面积可增加离子能量，而不增加用于产生等离子体的功率。 使用这样的喷头来增加离子能量可以在集成电路制造中更广泛地应用等离子体工艺。
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2.发明授权Enhanced passivation process to protect silicon prior to high dose implant strip 有权增强钝化工艺，以在高剂量植入条之前保护硅公开(公告)号：US08721797B2
公开(公告)日：2014-05-13
申请号：US12963503
申请日：2010-12-08
申请人： David Cheung , Haoquan Fang , Jack Kuo , Ilia Kalinovski , Ted Li , Andrew Yao
发明人： David Cheung , Haoquan Fang , Jack Kuo , Ilia Kalinovski , Ted Li , Andrew Yao
IPC分类号： B08B7/00
CPC分类号： H01L21/31138 , H01J37/32357 , H01L21/02057
摘要： Improved methods and apparatus for stripping photoresist and removing ion implant related residues from a work piece surface are provided. According to various embodiments, the workpiece is exposed to a passivation plasma, allowed to cool for a period of time, and then exposed to an oxygen-based or hydrogen-based plasma to remove the photoresist and ion implant related residues. Aspects of the invention include reducing silicon loss, leaving little or no residue while maintaining an acceptable strip rate. In certain embodiments, methods and apparatus remove photoresist material after high-dose ion implantation processes.
摘要翻译： 提供了用于剥离光致抗蚀剂和从工件表面去除离子注入相关残留物的改进的方法和设备。 根据各种实施例，工件暴露于钝化等离子体，允许冷却一段时间，然后暴露于氧基或氢基等离子体以除去光致抗蚀剂和与离子注入相关的残余物。 本发明的方面包括减少硅损失，留下很少或没有残留物，同时保持可接受的剥离速率。 在某些实施方案中，方法和装置在高剂量离子注入工艺之后去除光致抗蚀剂材料。
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公开(公告)号：US07288484B1
公开(公告)日：2007-10-30
申请号：US10890653
申请日：2004-07-13
IPC分类号： H01L21/302 , H01L21/461
CPC分类号： H01L21/02063 , G03F7/427 , H01L21/31138
摘要： The present invention pertains to methods for removing unwanted material from a semiconductor wafer during wafer manufacturing. More specifically, the invention pertains to stripping photo-resist material and removing etch-related residues from a semiconductor wafer. Methods involve implementing a plasma operation using hydrogen and a weak oxidizing agent, such as carbon dioxide. The invention is effective at stripping photo-resist and removing residues from low-k dielectric material used in Damascene devices.
摘要翻译： 本发明涉及在晶片制造期间从半导体晶片去除不想要的材料的方法。 更具体地，本发明涉及剥离光致抗蚀剂材料并从半导体晶片去除蚀刻相关残留物。 方法涉及使用氢气和弱氧化剂如二氧化碳来实施等离子体操作。 本发明在剥离抗蚀剂和从Damascene器件中使用的低k电介质材料中去除残余物方面是有效的。
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公开(公告)号：US08058178B1
公开(公告)日：2011-11-15
申请号：US12533461
申请日：2009-07-31
IPC分类号： H01L21/302 , H01L21/461
CPC分类号： H01L21/02063 , G03F7/427 , H01L21/31138
摘要： The present invention pertains to methods for removing unwanted material from a semiconductor wafer during wafer manufacturing. More specifically, the invention pertains to stripping photo-resist material and removing etch-related residues from a semiconductor wafer. Methods involve implementing a plasma operation using hydrogen and a weak oxidizing agent, such as carbon dioxide. The invention is effective at stripping photo-resist and removing residues from low-k dielectric material used in Damascene devices.
摘要翻译： 本发明涉及在晶片制造期间从半导体晶片去除不想要的材料的方法。 更具体地，本发明涉及剥离光致抗蚀剂材料并从半导体晶片去除蚀刻相关残留物。 方法涉及使用氢气和弱氧化剂如二氧化碳来实施等离子体操作。 本发明在剥离抗蚀剂和从Damascene器件中使用的低k电介质材料中去除残余物方面是有效的。
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公开(公告)号：US20110143548A1
公开(公告)日：2011-06-16
申请号：US12636582
申请日：2009-12-11
申请人： David Cheung , Haoquan Fang , Jack Kuo , Ilia Kalinovski , Ted Li , Andrew Yao , Anirban Guha , Kirk Ostrowski
发明人： David Cheung , Haoquan Fang , Jack Kuo , Ilia Kalinovski , Ted Li , Andrew Yao , Anirban Guha , Kirk Ostrowski
IPC分类号： H01L21/3065 , C23F1/08
CPC分类号： H01L21/31138 , G03F7/427 , H01L21/31116 , H01L21/31144 , H01L21/32136 , H01L21/32137 , H01L21/32139
摘要： Improved methods for stripping photoresist and removing ion implant related residues from a work piece surface are provided. According to various embodiments, plasma is generated using elemental hydrogen, a fluorine-containing gas and a protectant gas. The plasma-activated gases reacts with the high-dose implant resist, removing both the crust and bulk resist layers, while simultaneously protecting exposed portions of the work piece surface. The work piece surface is substantially residue free with low silicon loss.
摘要翻译： 提供了用于剥离光致抗蚀剂和从工件表面去除离子注入相关残留物的改进方法。 根据各种实施例，使用元素氢，含氟气体和保护气体产生等离子体。 等离子体活化气体与高剂量植入物抗蚀剂反应，去除了外壳和体抗蚀剂层，同时保护了工件表面的暴露部分。 工件表面基本上无残留物，硅损耗低。
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6.发明申请ENHANCED PASSIVATION PROCESS TO PROTECT SILICON PRIOR TO HIGH DOSE IMPLANT STRIP 有权增强钝化过程以保护高剂量植入物条带公开(公告)号：US20110139175A1
公开(公告)日：2011-06-16
申请号：US12963503
申请日：2010-12-08
申请人： David Cheung , Haoquan Fang , Jack Kuo , Ilia Kalinovski , Ted Li , Andrew Yao
发明人： David Cheung , Haoquan Fang , Jack Kuo , Ilia Kalinovski , Ted Li , Andrew Yao
CPC分类号： H01L21/31138 , H01J37/32357 , H01L21/02057
摘要： Improved methods and apparatus for stripping photoresist and removing ion implant related residues from a work piece surface are provided. According to various embodiments, the workpiece is exposed to a passivation plasma, allowed to cool for a period of time, and then exposed to an oxygen-based or hydrogen-based plasma to remove the photoresist and ion implant related residues. Aspects of the invention include reducing silicon loss, leaving little or no residue while maintaining an acceptable strip rate. In certain embodiments, methods and apparatus remove photoresist material after high-dose ion implantation processes.
摘要翻译： 提供了用于剥离光致抗蚀剂和从工件表面去除离子注入相关残留物的改进的方法和设备。 根据各种实施例，工件暴露于钝化等离子体，允许冷却一段时间，然后暴露于氧基或氢基等离子体以除去光致抗蚀剂和与离子注入相关的残余物。 本发明的方面包括减少硅损失，留下很少或没有残留物，同时保持可接受的剥离速率。 在某些实施方案中，方法和装置在高剂量离子注入工艺之后去除光致抗蚀剂材料。
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公开(公告)号：US07585777B1
公开(公告)日：2009-09-08
申请号：US11859727
申请日：2007-09-21
IPC分类号： H01L21/302 , H01L21/461
CPC分类号： H01L21/02063 , G03F7/427 , H01L21/31138
摘要： The present invention pertains to methods for removing unwanted material from a semiconductor wafer during wafer manufacturing. More specifically, the invention pertains to stripping photo-resist material and removing etch-related residues from a semiconductor wafer. Methods involve implementing a plasma operation using hydrogen and a weak oxidizing agent, such as carbon dioxide. The invention is effective at stripping photo-resist and removing residues from low-k dielectric material used in Damascene devices.
摘要翻译： 本发明涉及在晶片制造期间从半导体晶片去除不想要的材料的方法。 更具体地，本发明涉及剥离光致抗蚀剂材料并从半导体晶片去除蚀刻相关残留物。 方法涉及使用氢气和弱氧化剂如二氧化碳来实施等离子体操作。 本发明在剥离抗蚀剂和从Damascene器件中使用的低k电介质材料中去除残余物方面是有效的。
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