发明授权
- 专利标题： Semiconductor device having an electrode containing boron and manufacturing method thereof
- 专利标题（中）： 具有含硼电极的半导体装置及其制造方法
-
申请号： US11287192申请日： 2005-11-28
-
公开(公告)号： US07586163B2公开(公告)日： 2009-09-08
- 发明人: Koichi Kato , Daisuke Matsushita , Koichi Muraoka , Yasushi Nakasaki , Yuichiro Mitani , Nobutoshi Aoki
- 申请人： Koichi Kato , Daisuke Matsushita , Koichi Muraoka , Yasushi Nakasaki , Yuichiro Mitani , Nobutoshi Aoki
- 申请人地址： JP Tokyo
- 专利权人： Kabushiki Kaisha Toshiba
- 当前专利权人： Kabushiki Kaisha Toshiba
- 当前专利权人地址： JP Tokyo
- 代理机构： Finnegan, Henderson, Farabow, Garrett & Dunner, L.L.P.
- 优先权： JP2005-172667 20050613
- 主分类号： H01L29/76
- IPC分类号： H01L29/76
摘要：
A semiconductor device includes a semiconductor substrate; an insulation film provided on the semiconductor substrate; and an electrode provided on the insulation film, and containing boron and a semiconductor material, wherein at least one element of the group V and carbon is introduced into an interface between the insulation film and the electrode.
公开/授权文献
- US20060278940A1 Semiconductor device and manufacturing method thereof 公开/授权日：2006-12-14