发明授权
- 专利标题： Dielectric multilayer structures of microelectronic devices and methods for fabricating the same
- 专利标题（中）： 微电子器件的介质多层结构及其制造方法
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申请号： US11226053申请日： 2005-09-13
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公开(公告)号： US07588989B2公开(公告)日： 2009-09-15
- 发明人: Jong-Pyo Kim , Jong-Ho Lee , Hyung-Suk Jung , Jung-Hyoung Lee
- 申请人： Jong-Pyo Kim , Jong-Ho Lee , Hyung-Suk Jung , Jung-Hyoung Lee
- 申请人地址： KR Suwon-si, Gyeonggi-do
- 专利权人： Samsung Electronic Co., Ltd.
- 当前专利权人： Samsung Electronic Co., Ltd.
- 当前专利权人地址： KR Suwon-si, Gyeonggi-do
- 代理机构： Marger Johnson & McCollom, P.C.
- 优先权： KR10-2004-0073078 20040913
- 主分类号： H01L21/336
- IPC分类号： H01L21/336
摘要：
A dielectric multilayer structure of a microelectronic device, in which a leakage current characteristic and a dielectric constant are improved, is provided in an embodiment. The dielectric multilayer structure includes a lower dielectric layer, which is made of amorphous silicate (M1-xSixOy) or amorphous silicate nitride (M1-xSixOyNz), and an upper dielectric layer which is formed on top of the lower dielectric layer and which is made of amorphous metal oxide (M′Oy) or amorphous metal oxynitride (M′OyNz).
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