Thin film transistor and method for preparing the same
    1.
    发明授权
    Thin film transistor and method for preparing the same 有权
    薄膜晶体管及其制备方法

    公开(公告)号:US08258023B2

    公开(公告)日:2012-09-04

    申请号:US12451051

    申请日:2008-04-25

    申请人: Jung-Hyoung Lee

    发明人: Jung-Hyoung Lee

    IPC分类号: H01L21/00

    CPC分类号: H01L29/7869

    摘要: The present invention relates to a thin film transistor and a method of manufacturing the same. More particularly, the present invention relates to a thin film transistor that includes a zinc oxide material including Si as a channel material of a semiconductor layer, and a method of manufacturing the same.

    摘要翻译: 薄膜晶体管及其制造方法技术领域本发明涉及薄膜晶体管及其制造方法。 更具体地,本发明涉及一种薄膜晶体管及其制造方法,该薄膜晶体管包括包含Si作为半导体层的沟道材料的氧化锌材料。

    ORGANIC LIGHT EMITTING DIODE AND METHOD FOR MANUFACTURING THE SAME
    2.
    发明申请
    ORGANIC LIGHT EMITTING DIODE AND METHOD FOR MANUFACTURING THE SAME 有权
    有机发光二极管及其制造方法

    公开(公告)号:US20120037948A1

    公开(公告)日:2012-02-16

    申请号:US13207209

    申请日:2011-08-10

    IPC分类号: H01L33/36

    摘要: An exemplary embodiment of the present invention provides an organic light emitting diode, comprising a substrate, a first electrode, an organic material layer, and a second electrode, wherein a trench comprising a concave part and a convex part is provided on the substrate, the first electrode is provided on the substrate on which the trench is formed by being deposited, and an auxiliary electrode is provided on the first electrode. The organic light emitting diode according to the exemplary embodiment of the present invention may increase surface areas of the first electrode and the auxiliary electrode formed on the substrate, thereby implementing a low resistance electrode. In addition, since a line width of the electrode is not increased, it is possible to prevent a decrease of an opening ratio of the organic light emitting diode.

    摘要翻译: 本发明的一个示例性实施例提供了一种有机发光二极管,其包括衬底,第一电极,有机材料层和第二电极,其中在衬底上设置包括凹部和凸部的沟槽, 第一电极设置在通过沉积形成沟槽的衬底上,并且辅助电极设置在第一电极上。 根据本发明的示例性实施例的有机发光二极管可以增加形成在基板上的第一电极和辅助电极的表面积,从而实现低电阻电极。 另外,由于电极的线宽不增加,因此能够防止有机发光二极管的开口率的降低。

    ORGANIC LIGHT-EMITTING DIODE AND METHOD OF MANUFACTURING THE SAME
    3.
    发明申请
    ORGANIC LIGHT-EMITTING DIODE AND METHOD OF MANUFACTURING THE SAME 有权
    有机发光二极管及其制造方法

    公开(公告)号:US20110180792A1

    公开(公告)日:2011-07-28

    申请号:US13121983

    申请日:2009-10-01

    IPC分类号: H01L51/54 H01L33/42

    摘要: The present invention provides an organic light emitting diode comprising a substrate; a transparent cathode; an anode; and an organic material layer interposed between the transparent cathode and the anode, wherein the organic material layer comprises a light emitting layer and an n-type doped electron transport layer, the n-type doped electron transport layer includes an electron transport material and an n-type dopant and is disposed between the transparent cathode and the light emitting layer, and a method for manufacturing the same.

    摘要翻译: 本发明提供一种包含基板的有机发光二极管; 透明阴极; 阳极; 以及插入在透明阴极和阳极之间的有机材料层,其中有机材料层包括发光层和n型掺杂电子传输层,n型掺杂电子传输层包括电子传输材料和n 并且设置在透明阴极和发光层之间,以及其制造方法。

    Oled and Fabricating Method of the Same
    4.
    发明申请
    Oled and Fabricating Method of the Same 有权
    Oled和制造方法相同

    公开(公告)号:US20090184628A1

    公开(公告)日:2009-07-23

    申请号:US12224804

    申请日:2007-03-07

    IPC分类号: H01J1/63 B05D5/12

    摘要: The present invention provides an organic light emitting device comprising: a substrate; a first conductive layer and a second conductive layer, which are sequentially positioned on the substrate; and at least one organic material layer, including a light emitting layer, which is interposed between the first conductive layer and the second conductive layer; wherein the organic light emitting device comprises a pattern layer formed corresponding to the light emitting region between at least one organic material layer and at least one conductive layer of the first conductive layer and the second conductive layer; charges are injected or transported between the conductive layer and the organic material layer through the pattern layer; and charges are not directly injected or transported in the region in which two layers each in contact with the upper surface and the lower surface of the pattern layer are directly in contact, and a method for preparation thereof.

    摘要翻译: 本发明提供了一种有机发光器件,包括:衬底; 第一导电层和第二导电层,其顺序地位于所述基板上; 以及介于所述第一导电层和所述第二导电层之间的至少一个有机材料层,包括发光层; 其中所述有机发光器件包括对应于至少一个有机材料层和所述第一导电层的至少一个导电层与所述第二导电层之间的所述发光区域形成的图案层; 电荷通过图案层在导电层和有机材料层之间注入或传输; 并且在与图案层的上表面和下表面接触的两层直接接触的区域中不进行直接注入或输送电荷及其制备方法。

    Method of fabricating lanthanum oxide layer and method of fabricating MOSFET and capacitor using the same
    5.
    发明授权
    Method of fabricating lanthanum oxide layer and method of fabricating MOSFET and capacitor using the same 有权
    制造氧化镧层的方法及使用其制造MOSFET和电容器的方法

    公开(公告)号:US07153786B2

    公开(公告)日:2006-12-26

    申请号:US11034512

    申请日:2005-01-12

    IPC分类号: H01L21/31 H01L21/469

    摘要: Methods of fabricating a lanthanum oxide layer, and methods of fabricating a MOSFET and/or a capacitor especially adapted for semiconductor applications using such a lanthanum oxide layer are disclosed. The methods include a preliminary step of disposing a semiconductor substrate into a chamber. Tris(bis(trimethylsilyl)amino)Lanthanum as a lanthanum precursor is then injected into the chamber such that the lanthanum precursor is chemisorbed on the semiconductor substrate. Then, after carrying out a first purge of the chamber, at least one oxidizer is injected into the chamber such that the oxidizer is chemisorbed with the lanthanum precursor on the semiconductor substrate. Then, the chamber is purged a second time. The described steps of injecting the lanthanum precursor into the chamber, first-purging the chamber, injecting an oxidizer into the chamber, and second-purging the chamber may be sequentially and repeatedly performed to form a lanthanum oxide layer of a desired thickness having enhanced semiconductor characteristics.

    摘要翻译: 公开了制造氧化镧层的方法以及特别适用于使用这种氧化镧层的半导体应用的MOSFET和/或电容器的制造方法。 所述方法包括将半导体衬底设置到腔室中的预备步骤。 然后将三(双(三甲基甲硅烷基)氨基)镧作为镧前体注入室中,使得镧前体在半导体衬底上被化学吸附。 然后,在进行室的第一次吹扫之后,至少一个氧化剂被注入到室中,使得氧化剂与半导体衬底上的镧前体化学吸附。 然后,房间被第二次清除。 将镧前体注入到室中,首先清洗室,将氧化剂注入到室中,以及对室进行第二次净化的所述步骤可以被顺序地和重复地进行,以形成具有增强的半导体的所需厚度的氧化镧层 特点

    Organic light emitting diode and method for manufacturing the same
    6.
    发明授权
    Organic light emitting diode and method for manufacturing the same 有权
    有机发光二极管及其制造方法

    公开(公告)号:US09006771B2

    公开(公告)日:2015-04-14

    申请号:US13207209

    申请日:2011-08-10

    IPC分类号: H01L51/56 H01L51/52

    摘要: An exemplary embodiment of the present invention provides an organic light emitting diode, comprising a substrate, a first electrode, an organic material layer, and a second electrode, wherein a trench comprising a concave part and a convex part is provided on the substrate, the first electrode is provided on the substrate on which the trench is formed by being deposited, and an auxiliary electrode is provided on the first electrode. The organic light emitting diode according to the exemplary embodiment of the present invention may increase surface areas of the first electrode and the auxiliary electrode formed on the substrate, thereby implementing a low resistance electrode. In addition, since a line width of the electrode is not increased, it is possible to prevent a decrease of an opening ratio of the organic light emitting diode.

    摘要翻译: 本发明的一个示例性实施例提供了一种有机发光二极管,其包括衬底,第一电极,有机材料层和第二电极,其中在衬底上设置包括凹部和凸部的沟槽, 第一电极设置在通过沉积形成沟槽的衬底上,并且辅助电极设置在第一电极上。 根据本发明的示例性实施例的有机发光二极管可以增加形成在基板上的第一电极和辅助电极的表面积,从而实现低电阻电极。 另外,由于电极的线宽不增加,因此能够防止有机发光二极管的开口率的降低。

    Fabrication method for organic light emitting device and organic light emitting device fabricated by the same method
    7.
    发明授权
    Fabrication method for organic light emitting device and organic light emitting device fabricated by the same method 有权
    通过相同的方法制造的有机发光器件和有机发光器件的制造方法

    公开(公告)号:US08969126B2

    公开(公告)日:2015-03-03

    申请号:US12225100

    申请日:2007-03-15

    IPC分类号: H01L51/40 H01L51/50

    摘要: Disclosed is a method of fabricating an organic light emitting device and an organic light emitting device fabricated using the same. The method comprises the steps of sequentially forming a cathode made of metal, at least one organic material layer including a light emitting layer and an anode on a substrate, and additionally comprises the step of forming a thin metal film on a native oxide layer that is spontaneously formed on the cathode before forming of the organic material layer.

    摘要翻译: 公开了一种制造有机发光器件的方法和使用其制造的有机发光器件。 该方法包括以下步骤:顺序地形成由金属制成的阴极,至少一个有机材料层,其包括发光层和阳极,并且还包括在自然氧化物层上形成薄金属膜的步骤 在形成有机材料层之前在阴极上自发形成。

    FABRICATION METHOD FOR ORGANIC ELECTRONIC DEVICE AND ORGANIC ELECTRONIC DEVICE FABRICATED BY THE SAME METHOD
    8.
    发明申请
    FABRICATION METHOD FOR ORGANIC ELECTRONIC DEVICE AND ORGANIC ELECTRONIC DEVICE FABRICATED BY THE SAME METHOD 审中-公开
    有机电子器件的制造方法和由该方法制成的有机电子器件

    公开(公告)号:US20120280222A1

    公开(公告)日:2012-11-08

    申请号:US13552112

    申请日:2012-07-18

    IPC分类号: H01L51/52 H01L51/44 H01L51/10

    摘要: The present invention provides a fabrication method for an organic electronic device comprising a step of stacking sequentially a first electrode made of a metal, one or more organic material layers, and a second electrode on a substrate, wherein the method comprises the steps of: 1) forming a layer on the first electrode using a metal having a higher oxidation rate than the first electrode before forming the organic material layer, 2) treating the layer formed using a metal having a higher oxidation rate than the first electrode with oxygen plasma to form a metal oxide layer, and 3) treating the metal oxide layer with inert gas plasma to remove a native oxide layer on the first electrode, and an organic electronic device fabricated by the same method.

    摘要翻译: 本发明提供了一种有机电子器件的制造方法,其包括在衬底上依次堆叠由金属制成的第一电极,一个或多个有机材料层和第二电极的步骤,其中所述方法包括以下步骤:1 )在形成有机材料层之前,使用具有比第一电极更高的氧化速率的金属在第一电极上形成层,2)用氧等离子体处理使用比第一电极具有更高氧化速率的金属形成的层,以形成 金属氧化物层,以及3)用惰性气体等离子体处理金属氧化物层以除去第一电极上的自然氧化物层,以及通过相同方法制造的有机电子器件。

    THIN FILM TRANSISTOR AND METHOD FOR PREPARING THE SAME
    9.
    发明申请
    THIN FILM TRANSISTOR AND METHOD FOR PREPARING THE SAME 有权
    薄膜晶体管及其制备方法

    公开(公告)号:US20100117085A1

    公开(公告)日:2010-05-13

    申请号:US12451050

    申请日:2008-04-25

    申请人: Jung-Hyoung Lee

    发明人: Jung-Hyoung Lee

    摘要: The present invention relates to a thin film transistor and a method of manufacturing the same. More particularly, the present invention relates to a thin film transistor that includes a zinc oxide (ZnO series) electrode having one or more of Si, Mo, and W as a source electrode and a drain electrode, and a method of manufacturing the same.

    摘要翻译: 薄膜晶体管及其制造方法技术领域本发明涉及薄膜晶体管及其制造方法。 更具体地,本发明涉及一种薄膜晶体管及其制造方法,该薄膜晶体管包括具有作为源电极和漏电极的Si,Mo和W中的一种或多种的氧化锌(ZnO系)电极。

    Organic Light Emitting Device Using Inorganic Insulating Layer as an Electron Injecting Layer and Method for Preparing the Same
    10.
    发明申请
    Organic Light Emitting Device Using Inorganic Insulating Layer as an Electron Injecting Layer and Method for Preparing the Same 有权
    使用无机绝缘层作为电子注入层的有机发光装置及其制备方法

    公开(公告)号:US20090021159A1

    公开(公告)日:2009-01-22

    申请号:US12223388

    申请日:2007-02-05

    申请人: Jung-Hyoung Lee

    发明人: Jung-Hyoung Lee

    IPC分类号: H01J1/63 B05D5/12

    CPC分类号: H01L51/5092

    摘要: The present invention provides an organic light emitting device, wherein an electron injecting electrode, at least one organic material layer including a light emitting layer, and a hole injecting electrode are laminated; and an inorganic insulating layer formed from the materials having a band gap of 3.3 eV or more, and a band offset of 0.45 eV or less, is provided between the electron injecting electrode and the organic material layer; and a method for preparing the same.

    摘要翻译: 本发明提供了一种有机发光器件,其中层叠有电子注入电极,至少一个包括发光层的有机材料层和空穴注入电极; 并且在电子注入电极和有机材料层之间设置由具有3.3eV以上的带隙和0.45eV以下的带偏移的材料形成的无机绝缘层; 及其制备方法。