Invention Grant
US07589003B2 GeSn alloys and ordered phases with direct tunable bandgaps grown directly on silicon
失效
GeSn合金和直接在硅上生长的直接可调带隙的有序相
- Patent Title: GeSn alloys and ordered phases with direct tunable bandgaps grown directly on silicon
- Patent Title (中): GeSn合金和直接在硅上生长的直接可调带隙的有序相
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Application No.: US10559981Application Date: 2004-06-14
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Publication No.: US07589003B2Publication Date: 2009-09-15
- Inventor: John Kouvetakis , Matthew Bauer , Jose Menendez , Chang Wu Hu , Ignatius S. T. Tsong , John Tolle
- Applicant: John Kouvetakis , Matthew Bauer , Jose Menendez , Chang Wu Hu , Ignatius S. T. Tsong , John Tolle
- Assignee: Arizona Board of Regents, Acting for and on Behalf of Arizona State University, A Corporate Body Organized Under Arizona Law
- Current Assignee: Arizona Board of Regents, Acting for and on Behalf of Arizona State University, A Corporate Body Organized Under Arizona Law
- Agency: McDonnell Boehnen Hulbert & Berghoff LLP
- International Application: PCT/US2004/018961 WO 20040614
- International Announcement: WO2005/001902 WO 20050106
- Main IPC: H01L21/00
- IPC: H01L21/00
Abstract:
A method for depositing an epitaxial Ge—Sn layer on a substrate in a CVD reaction chamber includes introducing into the chamber a gaseous precursor comprising SnD4 under conditions whereby the epitaxial Ge—Sn layer is formed on the substrate. the gaseous precursor comprises SnD4 and high purity H2 of about 15-20% by volume. The gaseous precursor is introduced at a temperature in a range of about 250° C. to about 350° C. Using the process device-quality Sn—Ge materials with tunable bandgaps can be grown directly on Si substrates.
Public/Granted literature
- US20070020891A1 Gesn alloys and ordered phases with direct tunable bandgaps grown directly on silicon Public/Granted day:2007-01-25
Information query
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