发明授权
US07589994B2 Methods of writing data to magnetic random access memory devices with bit line and/or digit line magnetic layers
失效
将数据写入具有位线和/或数字线磁性层的磁性随机存取存储器件的方法
- 专利标题： Methods of writing data to magnetic random access memory devices with bit line and/or digit line magnetic layers
- 专利标题（中）： 将数据写入具有位线和/或数字线磁性层的磁性随机存取存储器件的方法
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申请号： US12171893申请日： 2008-07-11
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公开(公告)号： US07589994B2公开(公告)日： 2009-09-15
- 发明人: Won-Cheol Jeong , Jae-Hyun Park
- 申请人： Won-Cheol Jeong , Jae-Hyun Park
- 申请人地址： KR Gyeonggi-do
- 专利权人： Samsung Electronics Co., Ltd.
- 当前专利权人： Samsung Electronics Co., Ltd.
- 当前专利权人地址： KR Gyeonggi-do
- 代理机构： Myers Bigel Sibley & Sajovec, P.A.
- 优先权： KR2004-54939 20040714
- 主分类号： G11C11/00
- IPC分类号： G11C11/00
摘要：
A magnetic random access memory (MRAM) device may include a substrate, a first magnetic layer on the substrate, and a digit line on the first magnetic layer. A magnetic tunnel junction structure may be provided adjacent the digit line, and a bit line may be provided on the magnetic tunnel junction structure such that the magnetic tunnel junction structure is between the bit line and the digit line. In addition, a second magnetic layer may be provided on the bit line.
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