A semiconductor device includes a lateral end surface and a connection electrode for external electrical connection. The connection electrode is exposed at the side surface. A manufacturing method of the semiconductor device includes steps of forming a linear recess in a silicon substrate between adjacent semiconductor devices, forming, on an inner surface of the recess, the electrode for external electrical connection of one of the semiconductor devices, and a step of separating the one semiconductor device from another on the silicon substrate by cutting the silicon substrate along the linear recess. Forming the electrode includes steps of forming a metal thin film astride a cutting line at which the silicon substrate is to be cut, forming a resist layer and patterning the resist layer on the metal thin film, growing metal at a portion not having the patterned resist layer, and removing the patterned resist layer and the metal thin film below the patterned resist layer. The connection electrode is provided by the metal grown in the growing step.