发明授权
- 专利标题: Method of producing silicon blocks and silicon wafers
- 专利标题(中): 生产硅块和硅晶片的方法
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申请号: US11884121申请日: 2005-05-11
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公开(公告)号: US07591712B2公开(公告)日: 2009-09-22
- 发明人: Hiroaki Morikawa , Shoichi Karakida , Takafumi Kawasaki
- 申请人: Hiroaki Morikawa , Shoichi Karakida , Takafumi Kawasaki
- 申请人地址: JP Chiyoda-Ku, Tokyo
- 专利权人: Mitsubishi Electric Corporation
- 当前专利权人: Mitsubishi Electric Corporation
- 当前专利权人地址: JP Chiyoda-Ku, Tokyo
- 代理机构: Buchanan Ingersoll & Rooney PC
- 国际申请: PCT/JP2005/008603 WO 20050511
- 国际公布: WO2006/120736 WO 20061116
- 主分类号: B24B1/00
- IPC分类号: B24B1/00
摘要:
A method of producing silicon blocks by cutting a silicon ingot is provided. The method uses a silicon ingot cutting slurry containing abrasive grains and an alkaline substance so as to provide the silicon blocks that can be produced into silicon wafers each having a thin thickness with reduced substrate damage at the time of producing a solar battery. The alkaline substance has a content mass that is at least 3.5% with respect to the mass of the entire liquid components of said slurry, and the slurry contains an organic amine having a mass ratio of 0.5 to 5.0 with respect to water in the liquid components of the slurry. The slurry is used at a pH of 12 or more and at a temperature of from 65 to 95 degrees C.
公开/授权文献
- US20080223351A1 Method of Producing Silicon Blocks and Silicon Wafers 公开/授权日:2008-09-18
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