Invention Grant
- Patent Title: Single-mode distributed feedback semiconductor lasers
- Patent Title (中): 单模分布反馈半导体激光器
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Application No.: US12117053Application Date: 2008-05-08
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Publication No.: US07593446B2Publication Date: 2009-09-22
- Inventor: Mathieu Carras , Alfredo De Rossi
- Applicant: Mathieu Carras , Alfredo De Rossi
- Applicant Address: FR
- Assignee: Thales
- Current Assignee: Thales
- Current Assignee Address: FR
- Agency: Lowe Hauptman Ham & Berner, LLP
- Priority: FR0703390 20070511
- Main IPC: H01S5/00
- IPC: H01S5/00

Abstract:
The present invention relates to the field of distributed feedback semiconductor lasers. More specifically, the invention makes it possible to develop single-mode distributed feedback lasers with a production rate close to 100% using a simple and robust technology. To this end, the invention involves introducing radiative losses on just one of the two predominant modes of a DFB laser obtained by index modulation by defining a particular refractive index profile of the active area.
Public/Granted literature
- US20080279244A1 SINGLE-MODE DISTRIBUTED FEEDBACK SEMICONDUCTOR LASERS Public/Granted day:2008-11-13
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