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    STRONG DISTRIBUTED FEEDBACK SEMICONDUCTOR LASER
    2.
    发明申请
    STRONG DISTRIBUTED FEEDBACK SEMICONDUCTOR LASER 有权
    强大的分布式反馈半导体激光器

    公开(公告)号：US20080279233A1

    公开(公告)日：2008-11-13

    申请号：US12117780

    申请日：2008-05-09

    Applicant: Mathieu CARRAS ,  Alfredo DE ROSSI

    Inventor： Mathieu CARRAS ,  Alfredo DE ROSSI

    IPC: H01S5/10

    CPC classification number: H01S5/1228

    Abstract: The present invention relates to a strong distributed feedback semiconductor laser. More specifically, the invention implements a top optical waveguide (2) for semiconductor lasers having a surface metallic grating (5) making it possible to obtain a stable and controlled distributed feedback, using a simple and robust technology. In the inventive laser, which comprises an active area (1) having an effective refractive index (neff) in which a light wave is propagated with a wavelength (λ), the top waveguide (2) is made of a weakly-doped material and the periodic grating (5) depth (p) is [ λ 4 × neff ] plus or minus 50%, the low precision needed being one of the advantages of the inventive laser.

    Abstract translation: 本发明涉及强分布反馈半导体激光器。 更具体地，本发明实现了具有表面金属光栅（5）的半导体激光器的顶部光波导（2），使得可以使用简单且鲁棒的技术获得稳定和受控的分布式反馈。 在本发明的激光器中，其中包括有效折射率（neff）的有效区域（1），其中以波长（λ）传播光波，顶部波导管（2）由弱掺杂材料制成， 周期性光栅（5）深度（p）为 [ > 加或减50％，所需的低精度是本发明激光器的优点之一。

      Quantum cascade detector type device with high injector
      3.
      发明申请
      Quantum cascade detector type device with high injector 审中-公开
      量子级联检测器类型器件具有高注射器

      公开(公告)号：US20100195686A1

      公开(公告)日：2010-08-05

      申请号：US12497843

      申请日：2009-07-06

      Applicant: Mathieu Carras

      Inventor： Mathieu Carras

      IPC: H01S5/34

      CPC classification number: H01S5/3402 ,  B82Y20/00 ,  H01L31/035236 ,  H01L31/09

      Abstract: The invention relates to a quantum cascade device of detector type comprising two electrodes for applying a control electrical field, and a waveguide positioned between the two electrodes, said device comprising a gain region made up of a plurality of layers and comprising alternating strata of a first type each defining a quantum barrier and strata of a second type each defining a quantum well, each layer of the gain region comprising an injection barrier exhibiting an injection subband of charge carriers with a lower energy level called injector level (i) and an active area, said active area being made of a set of pairs of strata made from semiconductive materials so that each of the wells has at least one upper subband called third subband (3), a middle subband called second subband (2) and a bottom subband called first subband (1), the potential difference between the third and second subbands being such that the transition of an electron from the third subband to the second subband emits an energy corresponding to that needed for the emission of a photon, characterized in that: the active area also has a fourth subband (4) situated above the third subband; said fourth subband being such that, in the absence of any electrical field applied to the electrodes, the injector level of the injection barrier is less than the level of said fourth subband and greater than the level of the third subband and that, in the presence of a field applied to the electrodes, the charge carrier injector level (i) becomes greater than or equal to the level of the fourth subband, so as to generate a rapid relaxation phenomenon between the injector level and the fourth subband, the fourth subband being at a distance energy-wise from the third subband allowing an optical phonon relaxation.

      Abstract translation: 本发明涉及一种检测器类型的量子级联装置，包括用于施加控制电场的两个电极和位于两个电极之间的波导，所述装置包括由多层构成的增益区，并且包括交替的第一层 每个限定量子势垒和每个限定量子阱的第二类型的层，所述增益区的每个层包括表现出具有称为喷射器水平（i）的较低能级的电荷载流子的注入子带的注入势垒，以及有源区 所述有源区由一组由半导体材料制成的层构成，使得每个阱具有至少一个称为第三子带（3）的上子带，称为第二子带（2）的中间子带和称为 第一子带（1），第三和第二子带之间的电位差使得电子从第三子带到第二子带的转变 d发射对应于发射光子所需的能量，其特征在于：有源区域还具有位于第三子带上方的第四子带（4）; 所述第四子带使得在没有施加到电极的任何电场的情况下，注入势垒的注入器电平小于所述第四子带的电平并且大于第三子带的电平，并且在存在 施加到电极的场，电荷载流子注入器电平（i）变得大于或等于第四子带的电平，以便在喷射器电平和第四子带之间产生快速松弛现象，第四子带是 在与第三子带相隔一定距离处允许光学声子松弛。

      Photodetector having a near field concentration
      4.
      发明授权
      Photodetector having a near field concentration 有权
      具有近场浓度的光电探测器

      公开(公告)号：US07622703B2

      公开(公告)日：2009-11-24

      申请号：US10582796

      申请日：2004-12-07

      Applicant: Alfredo De Rossi ,  Mathieu Carras ,  Philippe Bois

      Inventor： Alfredo De Rossi ,  Mathieu Carras ,  Philippe Bois

      IPC: H01L29/06

      CPC classification number: H01L31/0352 ,  H01L31/0236 ,  Y02E10/50

      Abstract: The field of the invention is that of photodetectors (10), and more precisely so-called quantum well photodetectors operating in the medium infrared, known by the acronym QWIP standing for Quantum Well Infrared Photodetector.It is an object of the invention to increase the detectivity of the detectors by significantly reducing the surface area of the detection zone while conserving the incident flux. This result is obtained by arranging a structure (4) or grating on the active zone (31) of the photodetector (10), which couples the incident wave and confines it on the active zone (31).The major features of this structure (4) or this grating are that it comprises patterns or grooves having a first spatial frequency and a second spatial frequency, and also comprising a central defect.

      Abstract translation: 本发明的领域是光电检测器（10），更准确地说是所谓的量子阱光电探测器，其操作在中红外线，由称为QWIP的量子阱红外光检测器所称。 本发明的一个目的是通过显着地减小检测区的表面面积同时保护入射通量来增加检测器的检测能力。 该结果通过在光电检测器（10）的有源区（31）上布置结构（4）或光栅来获得，该结构（4）或光栅耦合入射波并将其限制在有源区（31）上。 该结构（4）或该光栅的主要特征在于其包括具有第一空间频率和第二空间频率的图案或凹槽，并且还包括中心缺陷。

      SINGLE-MODE DISTRIBUTED FEEDBACK SEMICONDUCTOR LASERS
      5.
      发明申请
      SINGLE-MODE DISTRIBUTED FEEDBACK SEMICONDUCTOR LASERS 有权
      单模分配反馈半导体激光器

      公开(公告)号：US20080279244A1

      公开(公告)日：2008-11-13

      申请号：US12117053

      申请日：2008-05-08

      Applicant: Mathieu CARRAS ,  Alfredo DE ROSSI

      Inventor： Mathieu CARRAS ,  Alfredo DE ROSSI

      IPC: H01S5/026

      CPC classification number: H01S5/12 ,  H01S5/0654 ,  H01S5/1218 ,  H01S5/1231

      Abstract: The present invention relates to the field of distributed feedback semiconductor lasers. More specifically, the invention makes it possible to develop single-mode distributed feedback lasers with a production rate close to 100% using a simple and robust technology. To this end, the invention involves introducing radiative losses on just one of the two predominant modes of a DFB laser obtained by index modulation by defining a particular refractive index profile of the active area.

      Abstract translation: 本发明涉及分布反馈半导体激光器领域。 更具体地，本发明使得可以使用简单和鲁棒的技术开发生产率接近100％的单模分布反馈激光器。 为此，本发明涉及通过限定有效区域的特定折射率分布，通过索引调制获得的DFB激光器的两种主要模式之一引入辐射损耗。

      Photodetector having a near field concentration
      8.
      发明申请
      Photodetector having a near field concentration 有权
      具有近场浓度的光电探测器

      公开(公告)号：US20070085114A1

      公开(公告)日：2007-04-19

      申请号：US10582796

      申请日：2004-12-07

      Applicant: Alfredo De Rossi ,  Mathieu Carras ,  Philippe Bois

      Inventor： Alfredo De Rossi ,  Mathieu Carras ,  Philippe Bois

      IPC: H01L31/113

      CPC classification number: H01L31/0352 ,  H01L31/0236 ,  Y02E10/50

      Abstract: The field of the invention is that of photodetectors (10), and more precisely so-called quantum well photodetectors operating in the medium infrared, known by the acronym QWIP standing for Quantum Well Infrared Photodetector. It is an object of the invention to increase the detectivity of the detectors by significantly reducing the surface area of the detection zone while conserving the incident flux. This result is obtained by arranging a structure (4) or grating on the active zone (31) of the photodetector (10), which couples the incident wave and confines it on the active zone (31). The major features of this structure (4) or this grating are that it comprises patterns or grooves having a first spatial frequency and a second spatial frequency, and also comprising a central defect.

      Abstract translation: 本发明的领域是光电检测器（10），更准确地说是所谓的量子阱光电探测器，其操作在中红外线，由称为QWIP的量子阱红外光检测器所称。 本发明的一个目的是通过显着地减小检测区的表面面积同时保护入射通量来增加检测器的检测能力。 该结果通过在光电检测器（10）的有源区（31）上布置结构（4）或光栅来获得，该结构（4）或光栅耦合入射波并将其限制在有源区（31）上。 该结构（4）或该光栅的主要特征在于其包括具有第一空间频率和第二空间频率的图案或凹槽，并且还包括中心缺陷。

      METHOD OF FABRICATING AN OPTICAL ANALYSIS DEVICE COMPRISING A QUANTUM CASCADE LASER AND A QUANTUM DETECTOR
      10.
      发明申请
      METHOD OF FABRICATING AN OPTICAL ANALYSIS DEVICE COMPRISING A QUANTUM CASCADE LASER AND A QUANTUM DETECTOR 审中-公开
      制造包含量子激光和量子检测器的光学分析装置的方法

      公开(公告)号：US20100029026A1

      公开(公告)日：2010-02-04

      申请号：US12533429

      申请日：2009-07-31

      Applicant: Vincent Berger ,  Mathieu Carras

      Inventor： Vincent Berger ,  Mathieu Carras

      IPC: H01L21/00

      CPC classification number: H01L31/173 ,  B82Y20/00 ,  G01S7/4811 ,  H01L31/035236 ,  H01S5/0262 ,  H01S5/3402

      Abstract: The invention relates to a method of fabricating an optical device for analysing a scene, comprising an emitter and a detector in the mid-infrared or far-infrared, characterized in that it comprises: the production of a stack of semiconductor layers grown epitaxially on the surface of a semiconductor substrate, certain layers of which are doped; the production of a first, quantum cascade laser emission device (L) emitting an analysis beam in the mid-infrared or far-infrared, from a first level called the emission level, into the stack of semiconductor layers; and the production of a second, quantum detector device (D) capable of detecting a beam backscattered by the scene to be analysed, at the same level in the stack as the emission level.

      Abstract translation: 本发明涉及一种制造用于分析场景的光学装置的方法，其包括在中红外或远红外线中的发射器和检测器，其特征在于，其包括：生成外延生长的半导体层堆叠 半导体衬底的表面，其某些层被掺杂; 制造从称为发射电平的第一级发射中红外或远红外线的分析光束的第一量子级联激光发射装置（L）进入半导体层堆叠; 以及产生能够检测由待分析场景反向散射的光束的第二量子检测器装置（D），其在堆叠中与发射水平相同的水平。

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