Invention Grant
- Patent Title: Angled implantation for removal of thin film layers
- Patent Title (中): 用于去除薄膜层的角度植入
-
Application No.: US11293753Application Date: 2005-12-01
-
Publication No.: US07595248B2Publication Date: 2009-09-29
- Inventor: Michael L. Hattendorf , Justin K. Brask , Justin S. Sandford , Jack Kavalieros , Matthew V. Metz
- Applicant: Michael L. Hattendorf , Justin K. Brask , Justin S. Sandford , Jack Kavalieros , Matthew V. Metz
- Applicant Address: US CA Santa Clara
- Assignee: Intel Corporation
- Current Assignee: Intel Corporation
- Current Assignee Address: US CA Santa Clara
- Agent Kathy J. Ortiz
- Main IPC: H01L21/265
- IPC: H01L21/265
Abstract:
Embodiments of the invention provide a device with a reverse-tapered gate electrode and a gate dielectric layer with a length close to that of the gate length. In an embodiment, this may be done by altering portions of a blanket dielectric layer with one or more angled ion implants, then removing the altered portions of the blanket dielectric layer.
Public/Granted literature
- US20070126067A1 Angled implantation for removal of thin film layers Public/Granted day:2007-06-07
Information query
IPC分类:
