Invention Grant
- Patent Title: Thin films measurement method and system
- Patent Title (中): 薄膜测量方法和系统
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Application No.: US12068062Application Date: 2008-02-01
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Publication No.: US07595896B2Publication Date: 2009-09-29
- Inventor: Yoel Cohen , Moshe Finarov , Klara Vinokur
- Applicant: Yoel Cohen , Moshe Finarov , Klara Vinokur
- Applicant Address: IL Rehovot
- Assignee: Nova Measuring Instruments Ltd.
- Current Assignee: Nova Measuring Instruments Ltd.
- Current Assignee Address: IL Rehovot
- Agency: The Nath Law Group
- Agent Derek Richmond; Sung Yeop Chung
- Priority: IL150438 20020626
- Main IPC: G01B11/28
- IPC: G01B11/28

Abstract:
A method and system are presented for use in controlling the processing of a structure. First measured data is provided being indicative of at least one of the following: a thickness (d2) of at least one layer (L2) of the structure W in at least selected sites of the structure prior to the processing of the structure, and a surface profile of the structure prior to said processing. An optical measurement is applied to at least the selected sites of the structure after said processing and second measured data is generated being indicative of at least one of the following: a thickness of the processed structure (d′) and a surface profile of the processed structure, The second measured data is analyzed by interpreting it using the first measured data to thereby determine a thickness (d′1 or d′2) of at least one layer of the processed structure. This determined thickness is thus indicative of the quality of said processing.
Public/Granted literature
- US20080204721A1 Thin films measurement method and system Public/Granted day:2008-08-28
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