发明授权
US07598095B2 Ferroelectric memory and ferroelectric capacitor with Ir-alloy electrode or Ru-alloy electrode and method of manufacturing same
有权
铁电存储器和具有Ir合金电极或Ru合金电极的铁电电容器及其制造方法
- 专利标题： Ferroelectric memory and ferroelectric capacitor with Ir-alloy electrode or Ru-alloy electrode and method of manufacturing same
- 专利标题（中）： 铁电存储器和具有Ir合金电极或Ru合金电极的铁电电容器及其制造方法
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申请号： US11193415申请日： 2005-08-01
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公开(公告)号： US07598095B2公开(公告)日： 2009-10-06
- 发明人: June-mo Koo , Young-soo Park , Sang-min Shin , Suk-pil Kim
- 申请人： June-mo Koo , Young-soo Park , Sang-min Shin , Suk-pil Kim
- 申请人地址： KR Gyeonggi-do
- 专利权人： Samsung Electronics Co., Ltd.
- 当前专利权人： Samsung Electronics Co., Ltd.
- 当前专利权人地址： KR Gyeonggi-do
- 代理机构： Harness, Dickey & Pierce, P.L.C.
- 优先权： KR10-2004-0061793 20040805
- 主分类号： H01L21/00
- IPC分类号： H01L21/00 ; H01L21/242 ; H01L21/31 ; H01L21/469
摘要：
A ferroelectric capacitor comprises a first electrode comprising an alloy containing a first element and a second element of the periodic table of the elements, the first element being selected from the group consisting of Ir and Ru. A ferroelectric layer is disposed on the first electrode, wherein the ferroelectric layer comprises a ferroelectric material containing the second element. A second electrode is disposed on the ferroelectric layer. The ferroelectric capacitor can be provided as part of a memory cell of a ferroelectric memory.
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