Invention Grant
US07598114B2 Sacrificial benzocyclobutene/norbornene polymers for making air gap semiconductor devices
有权
用于制造气隙半导体器件的牺牲苯并环丁烯/降冰片烯聚合物
- Patent Title: Sacrificial benzocyclobutene/norbornene polymers for making air gap semiconductor devices
- Patent Title (中): 用于制造气隙半导体器件的牺牲苯并环丁烯/降冰片烯聚合物
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Application No.: US10544428Application Date: 2004-01-30
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Publication No.: US07598114B2Publication Date: 2009-10-06
- Inventor: Youngfu Li , Robert A. Kirchhoff , Jason Q. Niu , Kenneth L. Foster
- Applicant: Youngfu Li , Robert A. Kirchhoff , Jason Q. Niu , Kenneth L. Foster
- Assignee: Dow Global Technologies Inc.
- Current Assignee: Dow Global Technologies Inc.
- International Application: PCT/US2004/002659 WO 20040130
- International Announcement: WO2004/073018 WO 20040826
- Main IPC: H01L51/40
- IPC: H01L51/40
Abstract:
A method of forming an air gap within a semiconductor structure by the steps of: (a) using a sacrificial polymer to occupy a space in a semiconductor structure; and (b) heating the semiconductor structure to decompose the sacrificial polymer leaving an air gap within the semiconductor structure, wherein the sacrificial polymer of step (a) is: (a) a copolymer of 5-ethylidene-2-norbornene and vinylbenzocyclobutene (or a vinylbenzocyclobutene derivative); or (b) a copolymer of 5-ethylidene-2-norbornene and 5-(3benzocyclobutylidene)-2-norbornene; or (c) a polymer of 5-(3benzocyclobutylidene)-2-norbornene. In addition, a semiconductor structure, having a sacrificial polymer positioned between conductor lines, wherein the sacrificial polymer is: (a) a copolymer of 5-ethylidene-2-norbornene and vinylbenzocyclobutene (or a vinylbenzocyclobutene derivative); or (b) a copolymer of 5-ethylidene-2-norbornene and 5-(3benzocyclobutylidene)-2-norbornene; or (c) a polymer of 5-(3benzocyclobutylidene)-2-norbornene.
Public/Granted literature
- US20060246681A1 Sacrificial benzocyclobutene/norbornene polymers for making air gap semiconductor devices Public/Granted day:2006-11-02
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