Abstract:
Prepare a multimodal thermoplastic polymer foam having a distribution of large and small cells in a substantial absence of water by using a blowing agent stabilizer. Multimodal foams of the present invention have blowing agent stabilizer predominantly located proximate to large cells. The resulting multimodal foams have particular utility as thermal insulating materials.
Abstract:
The invention is a bis-BCB compound of the structure: ##STR1## a method for making same and polymers made therefrom. The novel compounds of this invention are useful in preparing polymers that can form thin film coatings for multichip midules (MCMs) and integrated circuits (ICs). These compounds can be isolated as liquids at room temperature, and can form polymers that are hydrophobic and have low dielectrical and dissipative properties.
Abstract:
This invention is directed to a class of arylcyclobutene monomers having the general formula: ##STR1## wherein Ar is aromatic, with the proviso that the carbons of the cyclobutene rings are bonded to adjacent carbon atoms on the same aromatic ring of Ar;and R.sup.1 is a divalent alkyl, cycloaliphatic, aromatic, heteroaromatic, or heterocyclic moiety;polymeric compositions containing these monomers; and articles containing said polymeric compositions.
Abstract:
The invention comprises cyclobutarene ketoaniline monomers and the process for preparing them. The monomers can be used to graft and/or endcap a monomer or polymer having at least 1 amino-reactive functionality. The grafted and/or endcapped monomer or polymer can subsequently be processed to prepare a highly crosslinked network.The preferred monomer has the formula: ##STR1##
Abstract:
A method of forming an air gap within a semiconductor structure by the steps of: (a) using a sacrificial polymer to occupy a space in a semiconductor structure; and (b) heating the semiconductor structure to decompose the sacrificial polymer leaving an air gap within the semiconductor structure, wherein the sacrificial polymer of step (a) is: (a) a copolymer of 5-ethylidene-2-norbornene and vinylbenzocyclobutene (or a vinylbenzocyclobutene derivative); or (b) a copolymer of 5-ethylidene-2-norbornene and 5-(3benzocyclobutylidene)-2-norbornene; or (c) a polymer of 5-(3benzocyclobutylidene)-2-norbornene. In addition, a semiconductor structure, having a sacrificial polymer positioned between conductor lines, wherein the sacrificial polymer is: (a) a copolymer of 5-ethylidene-2-norbornene and vinylbenzocyclobutene (or a vinylbenzocyclobutene derivative); or (b) a copolymer of 5-ethylidene-2-norbornene and 5-(3benzocyclobutylidene)-2-norbornene; or (c) a polymer of 5-(3benzocyclobutylidene)-2-norbornene.
Abstract:
The invention is a compound which comprises an unsaturated cyclic imide moiety and an aryl cyclobutene moiety, wherein the cyclobutene moiety is fused to the aryl radical, and wherein the imide nitrogen is connected to the aryl radical by a direct bond or a bridging member. Another aspect of this invention is a polyimide polymeric composition which results from the polymerization of the above-described compounds.
Abstract:
Monomeric compositions comprising a monomer containing one arylcyclobutane moiety, and a molecular group comprising at least one unsaturated alkyl group are provided.
Abstract:
The invention is a process for the preparation of coated nitride powder, comprising contacting one or more metal complex(es), organo-aluminum material, optionally one or more silicon compounds or mixtures thereof, with nitride powder under conditions such that coated nitride powder is formed. A metal complex is a metal-containing system which is soluble in a host liquid. The process of the invention is a process for making coated nitride powder and obtaining the desirable properties of coated nitride powder, while maintaining the desirable properties of the uncoated powder, such as good thermal conductivity, for use in electronic applications. In another aspect, the invention is a coated nitride powder which has the advantageous properties of the uncoated powder and is a desirable alternative to current nitride coatings.