A method of manufacturing a semiconductor device includes the steps of: grinding the rear surface of a semiconductor wafer to reduce its thickness; flattening the rear surface of the semiconductor wafer; dividing the semiconductor wafer into a plurality of semiconductor chips; forming gold bumps on the electrodes of the plurality of semiconductor chips; applying NCP to the front surface of a packaging board; and arranging the semiconductor chips over the packaging board through the NCP and pressing the back surfaces of the semiconductor chips to flip-chip bond the semiconductor chips to the packaging board. Therefore, it is possible to prevent NCP from rising onto the back surfaces of the semiconductor chips at the time of flip-chip bonding, whereby separation and cracking caused by a high-temperature treatment for assembly and mounting of a semiconductor device can be prevented and the reliability of the semiconductor device can be improved.