发明授权
- 专利标题： Method for manufacturing thin film semiconductor
- 专利标题（中）： 薄膜半导体制造方法
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申请号： US12134698申请日： 2008-06-06
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公开(公告)号： US07598160B2公开(公告)日： 2009-10-06
- 发明人: Akio Machida , Toshio Fujino , Tadahiro Kono
- 申请人： Akio Machida , Toshio Fujino , Tadahiro Kono
- 申请人地址： JP Tokyo
- 专利权人： Sony Corporation
- 当前专利权人： Sony Corporation
- 当前专利权人地址： JP Tokyo
- 代理机构： K&L Gates LLP
- 优先权： JPP2006-067273 20060313; JPP2006-347053 20061225
- 主分类号： H01L21/36
- IPC分类号： H01L21/36
摘要：
A method for manufacturing thin film semiconductor device is provided. The semiconductor thin film includes a semiconductor thin film and a gate electrode and has an active region turned into a polycrystalline region through irradiation with an energy beam. The gate electrode is provided to traverse the active region. In a channel part that is the active region overlapping with the gate electrode, a crystalline state is changed cyclically in a channel length direction, and areas each having a substantially same crystalline state traverse the channel part.
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