发明授权
US07598531B2 Electronic device contact structures 有权
电子设备接触结构

Electronic device contact structures
摘要:
Electronic devices involving contact structures, and related components, systems and methods associated therewith are described. Contact structures (also referred to as electrical contact structures or electrodes) are features on a device that are electrically connected to a power source. The power source can provide current to the device via the contact structures. The contact structures can be designed to improve current distribution in electronic devices. For example, the contact resistance of the contacts may be modified to improve current distribution (e.g., by controlling the shape and/or structure and/or composition of the contacts). The contact structures may include an intervening layer (e.g., a non-ohmic layer) positioned between a surface of the device and a conductive portion extending from a conductive pad. The intervening layer and/or conductive portions may be designed to have certain shapes (e.g., non-linear shapes) that promote current flow from the conductive pad towards the ends of the contacts to increase current spreading. The intervening layer can also reduce light generation underneath the light absorbing contacts to allow a greater percentage of the generated light to emerge from the surface of the device. Advantageously, devices including contact structures of the invention can increase uniformity of light emission and/or otherwise improve performance. As such, these contact structures are particularly suitable for use in a variety of light-emitting devices, including LEDs.
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IPC分类:
H 电学
H01 基本电气元件
H01L 半导体器件;其他类目中不包括的电固体器件(使用半导体器件的测量入G01;一般电阻器入H01C;磁体、电感器、变压器入H01F;一般电容器入H01G;电解型器件入H01G9/00;电池组、蓄电池入H01M;波导管、谐振器或波导型线路入H01P;线路连接器、汇流器入H01R;受激发射器件入H01S;机电谐振器入H03H;扬声器、送话器、留声机拾音器或类似的声机电传感器入H04R;一般电光源入H05B;印刷电路、混合电路、电设备的外壳或结构零部件、电气元件的组件的制造入H05K;在具有特殊应用的电路中使用的半导体器件见应用相关的小类)
H01L29/00 专门适用于整流、放大、振荡或切换,并具有至少一个电位跃变势垒或表面势垒的半导体器件;具有至少一个电位跃变势垒或表面势垒,例如PN结耗尽层或载流子集结层的电容器或电阻器;半导体本体或其电极的零部件(H01L31/00至H01L47/00,H01L51/05优先;除半导体或其电极之外的零部件入H01L23/00;由在一个共用衬底内或其上形成的多个固态组件组成的器件入H01L27/00)
H01L29/02 .按其半导体本体的特征区分的
H01L29/12 ..按其构成材料的特征区分的
H01L29/20 ...除掺杂材料或其他杂质外,只包括AⅢBⅤ化合物的
H01L29/201 ....包括两种或更多种化合物的
H01L29/205 .....在不同半导体区域中的
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