发明授权
- 专利标题: Semiconductor device
- 专利标题(中): 半导体器件
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申请号: US11152114申请日: 2005-06-15
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公开(公告)号: US07598589B2公开(公告)日: 2009-10-06
- 发明人: Nobuyoshi Takahashi , Satoshi Iwamoto , Fumihiko Noro , Masatoshi Arai
- 申请人: Nobuyoshi Takahashi , Satoshi Iwamoto , Fumihiko Noro , Masatoshi Arai
- 申请人地址: JP Osaka
- 专利权人: Panasonic Corporation
- 当前专利权人: Panasonic Corporation
- 当前专利权人地址: JP Osaka
- 代理机构: McDermott Will & Emery LLP
- 优先权: JP2004-308646 20041022
- 主分类号: H01L27/105
- IPC分类号: H01L27/105
摘要:
A semiconductor device includes a memory section formed at a semiconductor substrate and including a first transistor having an ONO film that can store charges between the semiconductor substrate and a memory electrode and a first STI region for isolating the first transistor, and a CMOS section formed at the semiconductor substrate and including a second transistor having a CMOS electrode and a gate dielectric and a second STI region for isolating the second transistor. The height of the top surface of the first STI region is set equal to or smaller than the height of the top surface of the second STI region.
公开/授权文献
- US20060086971A1 Semiconductor device and method for fabricating the same 公开/授权日:2006-04-27