The semiconductor chip 1 has a semiconductor substrate 10. In the present embodiment, the semiconductor substrate 10, which is an SOI substrate, is constituted by comprising a support substrate 12, an insulating layer 14 formed on the support substrate 12 with a layered structure, and a silicon layer 16 formed on the insulating layer 14 with the layered structure. The semiconductor substrate 10 has a circuit forming region A1 provided in the silicon layer 16. An insulating region 18 is provided on the semiconductor substrate 10. The insulating region 18 is provided so as to surround the entire side face of the circuit forming region A1.