发明授权
- 专利标题: Memory array buried digit line
- 专利标题(中): 存储阵列埋数字线
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申请号: US11490619申请日: 2006-07-21
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公开(公告)号: US07601608B2公开(公告)日: 2009-10-13
- 发明人: David H. Wells
- 申请人: David H. Wells
- 申请人地址: US ID Boise
- 专利权人: Micron Technologies, Inc.
- 当前专利权人: Micron Technologies, Inc.
- 当前专利权人地址: US ID Boise
- 代理机构: Knobbe Martens Olson & Bear
- 主分类号: H01L21/8242
- IPC分类号: H01L21/8242
摘要:
A method of forming a buried digit line is disclosed. Sacrificial spacers are formed along the sidewalls of an isolation trench, which is then filled with a sacrificial material. One spacer is masked while the other spacer is removed and an etch step into the substrate beneath the removed spacer forms an isolation window. Insulating liners are then formed along the sidewalls of the emptied trench, including into the isolation window. A digit line recess is then formed through the bottom of the trench between the insulating liners, which double as masks to self-align this etch. The digit line recess is then filled with metal and recessed back, with an optional prior insulating element deposited and recessed back in the bottom of the recess.
公开/授权文献
- US20060258118A1 Memory array buried digit line 公开/授权日:2006-11-16
信息查询
IPC分类: