Invention Grant
- Patent Title: Semiconductor wafer and manufacturing method thereof
- Patent Title (中): 半导体晶片及其制造方法
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Application No.: US11783669Application Date: 2007-04-11
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Publication No.: US07601617B2Publication Date: 2009-10-13
- Inventor: Hiroaki Uchida
- Applicant: Hiroaki Uchida
- Applicant Address: JP Tokyo
- Assignee: Oki Semiconductor Co., Ltd.
- Current Assignee: Oki Semiconductor Co., Ltd.
- Current Assignee Address: JP Tokyo
- Agency: Rabin & Berdo, PC.
- Priority: JPJP2004-001271 20040106; JPJP2004-123638 20040420
- Main IPC: H01L21/36
- IPC: H01L21/36 ; H01L21/20
Abstract:
The present invention provides a semiconductor wafer comprising an insulated board of sapphire or the like having translucency, which is provided with a positioning orientation flat at a peripheral portion thereof, and a silicon thin film formed over the entire one surface of the insulated board. In the semiconductor wafer, ions are implanted in an area containing the orientation flat at a peripheral portion of the silicon thin film to amorphize silicon. Thus, the translucency at the amorphized spot is eliminated and accurate positioning using the conventional optical sensor can be performed.
Public/Granted literature
- US20070190756A1 Semiconductor wafer and manufacturing method thereof Public/Granted day:2007-08-16
Information query
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