公开(公告)号：US20100175714A1

公开(公告)日：2010-07-15

申请号：US12440400

申请日：2007-09-05

Applicant: Tatsuo Nagai ,  Hiroshi Morita ,  Hiroaki Takahashi ,  Hiroaki Uchida ,  Toyohide Hayashi

Inventor： Tatsuo Nagai ,  Hiroshi Morita ,  Hiroaki Takahashi ,  Hiroaki Uchida ,  Toyohide Hayashi

IPC: B08B3/08

CPC classification number: G03F7/423 ,  H01L21/6708

Abstract: A substrate processing apparatus and a substrate processing method, with which a resist can be removed satisfactorily from the substrate and a processing solution used for removing the resist can be recycled, are provided. The substrate processing apparatus includes: a substrate holding means holding a substrate; a peroxosulfuric acid generating means generating a peroxosulfuric acid using sulfuric acid; a mixing means mixing the peroxosulfuric acid generated by the peroxosulfuric acid generating means and sulfuric acid of higher temperature and higher concentration than the sulfuric acid used in the peroxosulfuric acid generating means; and a discharging means discharging, toward the substrate held by the substrate holding means, the mixed solution of the peroxosulfuric acid and the sulfuric acid mixed by the mixing means as a processing solution for removing a resist from the substrate.

Abstract translation: 提供了可以从衬底中令人满意地去除抗蚀剂的衬底处理设备和衬底处理方法，并且可以再循环用于除去抗蚀剂的处理溶液。 基板处理装置包括：保持基板的基板保持装置; 使用硫酸生成过氧硫酸的过氧硫酸生成装置; 将由过硫酸产生装置产生的过氧硫酸与比过硫酸产生装置中使用的硫酸更高和更高浓度的硫酸混合的混合装置; 以及排出装置将由所述基板保持装置保持的基板排出由所述混合装置混合的所述过硫酸和所述硫酸的混合溶液作为从所述基板除去抗蚀剂的处理溶液。

公开(公告)号：US20090107522A1

公开(公告)日：2009-04-30

申请号：US12255132

申请日：2008-10-21

Applicant: Hiroaki Uchida ,  Tadashi Maegawa ,  Seiji Ano

Inventor： Hiroaki Uchida ,  Tadashi Maegawa ,  Seiji Ano

IPC: C23G1/02 ,  H01L21/30

CPC classification number: H01L21/6708 ,  H01L21/67051

Abstract: An inventive substrate treatment method is performed by a substrate treatment apparatus including a plate having an opposed surface to be kept in opposed spaced relation to one surface of a substrate for treating the substrate with a treatment liquid, and includes: a pre-supply liquid filling step of supplying a pre-supply liquid into a space defined between the one surface of the substrate and the plate through a spout which is provided in the opposed surface in opposed relation to the center of the substrate, and filling the space with the pre-supply liquid, the pre-supply liquid having a smaller contact angle with respect to the substrate and the plate than the treatment liquid; a treatment liquid replacing step of, after a liquid-filled state is established in the space filled with the pre-supply liquid, supplying the treatment liquid into the space to replace the pre-supply liquid present in the space with the treatment liquid while keeping the space in the liquid-filled state; and a treatment liquid contacting step of, after the replacement of the pre-supply liquid, filling the space with the treatment liquid to cause the treatment liquid to contact the one surface of the substrate.

Abstract translation: 本发明的基板处理方法由基板处理装置进行，该基板处理装置包括具有相对表面的板，以与处理液处理基板的基板的一个表面保持相对间隔的关系，并且包括：预供给液体填充 通过相对于基板的中心设置在相对的表面中的喷口将预供应液供给到在基板的一个表面和板之间限定的空间中的步骤， 供给液体，预处理液体相比于处理液体相对于基板和板具有较小的接触角; 处理液体置换步骤，在填充有预供应液体的空间中建立液体填充状态之后，将处理液供给到空间中以用处理液替换存在于处理液体中的预供应液体，同时保持 液体填充状态的空间; 以及处理液接触步骤，在更换所述预供应液体之后，用所述处理液填充所述空间，以使所述处理液体接触所述基板的所述一个表面。

公开(公告)号：US09593347B2

公开(公告)日：2017-03-14

申请号：US13641649

申请日：2011-04-18

Applicant: Joseph C. Glorioso, III ,  Hiroaki Uchida ,  Justus B. Cohen

Inventor： Joseph C. Glorioso, III ,  Hiroaki Uchida ,  Justus B. Cohen

IPC: C12N15/869 ,  C12N7/01 ,  A61K48/00 ,  A61K35/763 ,  C07K14/005 ,  C12N7/00 ,  C12N15/86

CPC classification number: A61K39/0011 ,  A61K2039/585 ,  C07K14/005 ,  C12N7/00 ,  C12N15/86 ,  C12N15/8695 ,  C12N2710/16621 ,  C12N2710/16622 ,  C12N2710/16643 ,  C12N2710/16671 ,  C12N2810/6009 ,  C12N2810/851 ,  C12N2810/859

Abstract: The invention provides modified HSV vectors that exhibit enhanced entry of cells, either through direct infection and/or lateral spread. In one aspect, HSV vectors of the present invention can directly infect cells through interaction with cell proteins other than typical mediators of HSV infection. In another aspect, the invention provides an HSV vector, which exhibits lateral spread in cells typically resistant to HSV lateral spread, such as cells lacking gD receptors. The invention further provides DNA encoding mutant forms of the HSV gB and gH glycoproteins, stocks of the inventive virus, and methods for effecting viral targeting and efficient entry of cells. The invention also pertains to the use of the inventive vectors for treating cancers.

Abstract translation: 本发明提供修饰的HSV载体，其通过直接感染和/或侧向扩散显示增强的细胞进入。 一方面，本发明的HSV载体可以通过与HSV感染的典型介质以外的细胞蛋白的相互作用直接感染细胞。 在另一方面，本发明提供了HSV载体，其在通常耐HSV侧向扩散的细胞中显示横向扩散，例如缺乏gD受体的细胞。 本发明进一步提供编码HSV gB和gH糖蛋白的突变体形式的DNA，本发明病毒的库存，以及用于进行病毒靶向和细胞有效进入的方法。 本发明还涉及本发明载体用于治疗癌症的用途。

公开(公告)号：US20130096186A1

公开(公告)日：2013-04-18

申请号：US13641649

申请日：2011-04-18

Applicant: Joseph C. Glorioso, III ,  Hiroaki Uchida ,  Justus B. Cohen

Inventor： Joseph C. Glorioso, III ,  Hiroaki Uchida ,  Justus B. Cohen

IPC: C12N15/869

CPC classification number: A61K39/0011 ,  A61K2039/585 ,  C07K14/005 ,  C12N7/00 ,  C12N15/86 ,  C12N15/8695 ,  C12N2710/16621 ,  C12N2710/16622 ,  C12N2710/16643 ,  C12N2710/16671 ,  C12N2810/6009 ,  C12N2810/851 ,  C12N2810/859

Abstract: The invention provides modified HSV vectors that exhibit enhanced entry of cells, either through direct infection and/or lateral spread. In one aspect, HSV vectors of the present invention can directly infect cells through interaction with cell proteins other than typical mediators of HSV infection. In another aspect, the invention provides an HSV vector, which exhibits lateral spread in cells typically resistant to HSV lateral spread, such as cells lacking gD receptors. The invention further provides DNA encoding mutant forms of the HSV gB and gH glycoproteins, stocks of the inventive virus, and methods for effecting viral targeting and efficient entry of cells. The invention also pertains to the use of the inventive vectors for treating cancers.

Abstract translation: 本发明提供修饰的HSV载体，其通过直接感染和/或侧向扩散显示增强的细胞进入。 一方面，本发明的HSV载体可以通过与HSV感染的典型介质以外的细胞蛋白的相互作用直接感染细胞。 在另一方面，本发明提供了HSV载体，其在通常耐HSV侧向扩散的细胞中显示横向扩散，例如缺乏gD受体的细胞。 本发明进一步提供编码HSV gB和gH糖蛋白的突变体形式的DNA，本发明病毒的库存，以及用于进行病毒靶向和细胞有效进入的方法。 本发明还涉及本发明载体用于治疗癌症的用途。

公开(公告)号：US07601617B2

公开(公告)日：2009-10-13

申请号：US11783669

申请日：2007-04-11

Applicant: Hiroaki Uchida

Inventor： Hiroaki Uchida

IPC: H01L21/36 ,  H01L21/20

CPC classification number: H01L27/12 ,  H01L21/86 ,  Y10S438/975

Abstract: The present invention provides a semiconductor wafer comprising an insulated board of sapphire or the like having translucency, which is provided with a positioning orientation flat at a peripheral portion thereof, and a silicon thin film formed over the entire one surface of the insulated board. In the semiconductor wafer, ions are implanted in an area containing the orientation flat at a peripheral portion of the silicon thin film to amorphize silicon. Thus, the translucency at the amorphized spot is eliminated and accurate positioning using the conventional optical sensor can be performed.

Abstract translation: 本发明提供了一种半导体晶片，其包括半导体的蓝宝石等的绝缘板，其在其周边部分设置有定位取向平面，以及形成在绝缘板的整个表面上的硅薄膜。 在半导体晶片中，将离子注入到在硅薄膜的周边部分包含定向平面的区域中以将硅非晶硅化。 因此，消除了非晶化点处的半透明度，并且可以执行使用常规光学传感器的精确定位。

公开(公告)号：US07224031B2

公开(公告)日：2007-05-29

申请号：US11029648

申请日：2005-01-06

Applicant: Hiroaki Uchida

Inventor： Hiroaki Uchida

IPC: H01L29/786

CPC classification number: H01L27/12 ,  H01L21/86 ,  Y10S438/975

Abstract: The present invention provides a semiconductor wafer comprising an insulated board of sapphire or the like having translucency, which is provided with a positioning orientation flat at a peripheral portion thereof, and a silicon thin film formed over the entire one surface of the insulated board. In the semiconductor wafer, ions are implanted in an area containing the orientation flat at a peripheral portion of the silicon thin film to amorphize silicon. Thus, the translucency at the amorphized spot is eliminated and accurate positioning using the conventional optical sensor can be performed.

Abstract translation: 本发明提供了一种半导体晶片，其包括半导体的蓝宝石等的绝缘板，其在其周边部分设置有定位取向平面，以及形成在绝缘板的整个表面上的硅薄膜。 在半导体晶片中，将离子注入到在硅薄膜的周边部分包含定向平面的区域中以将硅非晶硅化。 因此，消除了非晶化点处的半透明度，并且可以执行使用常规光学传感器的精确定位。

公开(公告)号：US07102420B2

公开(公告)日：2006-09-05

申请号：US10316360

申请日：2002-12-11

Applicant: Hiroaki Uchida

Inventor： Hiroaki Uchida

IPC: H01J19/82

CPC classification number: H01L28/84 ,  H01L21/31144 ,  H01L21/76816 ,  H01L21/76877 ,  H01L21/76885 ,  H01L21/76892 ,  H01L21/76895 ,  H01L27/10852 ,  H01L27/10894 ,  H01L2924/0002 ,  H01L2924/00

Abstract: Some of the members constituting a semiconductor element are formed from α-Si and an HSG forming process is implemented to form hemispherical polysilicon grains at some of the members formed from α-Si. Thus, a semiconductor device that is achieved without requiring a great number of manufacturing steps such as film formation and etching, facilitates control of the individual steps and assures reliable electrical connection between the members and a method of manufacturing such a semiconductor device are provided.

公开(公告)号：US06828207B2

公开(公告)日：2004-12-07

申请号：US10352947

申请日：2003-01-29

Applicant: Yoshiki Nagatomo ,  Shoji Yo ,  Osamu Nanba ,  Hiroaki Uchida ,  Kazuya Suzuki

Inventor： Yoshiki Nagatomo ,  Shoji Yo ,  Osamu Nanba ,  Hiroaki Uchida ,  Kazuya Suzuki

IPC: H01L2120

CPC classification number: H01L27/10852 ,  H01L27/10817 ,  H01L27/10885 ,  H01L28/84 ,  H01L28/91

Abstract: A first insulating layer is formed on semiconductor substrate, and a trench is formed in the first insulating layer. An amorphous silicon layer doped with impurities is formed on a side and bottom walls of the trench. Next, a resist material is partially filled in the trench so that an upper portion of the amorphous silicon layer is exposed. The exposed portion is implanted with impurity ions. After removal of the resist material, the amorphous silicon layer is heat treated so as to grow hemispherical grains on its surface.

Abstract translation: 在半导体衬底上形成第一绝缘层，并且在第一绝缘层中形成沟槽。 掺杂有杂质的非晶硅层形成在沟槽的侧壁和底壁上。 接下来，将抗蚀剂材料部分地填充在沟槽中，使得非晶硅层的上部露出。 暴露部分注入杂质离子。 在去除抗蚀剂材料之后，非晶硅层被热处理以便在其表面上生长半球状晶粒。

公开(公告)号：US06524968B2

公开(公告)日：2003-02-25

申请号：US09970692

申请日：2001-10-05

Applicant: Masashi Takahashi ,  Toshio Nagata ,  Yoshirou Tsurugida ,  Takashi Ohsako ,  Hirotaka Mori ,  Akihiko Ohara ,  Hidetsugu Uchida ,  Hiroaki Uchida ,  Katsuji Yoshida ,  Masahiro Takahashi

Inventor： Masashi Takahashi ,  Toshio Nagata ,  Yoshirou Tsurugida ,  Takashi Ohsako ,  Hirotaka Mori ,  Akihiko Ohara ,  Hidetsugu Uchida ,  Hiroaki Uchida ,  Katsuji Yoshida ,  Masahiro Takahashi

IPC: H01L2131

CPC classification number: H01L21/28211 ,  H01L21/02238 ,  H01L21/02337 ,  H01L21/02359 ,  H01L21/31662

Abstract: A method for forming an insulating film is provided which is capable of inhibiting spontaneous growth of a silicon oxide film formed on a silicon substrate and an increase in thickness of a film caused by exposure to an atmosphere. After having allowed a silicon dioxide layer with a predetermined thickness to grow on a surface of a silicon crystal, a surface of the silicon dioxide is exposed to organic gas containing no hydroxyl group or is exposed to ammonia gas.

Abstract translation: 提供一种形成绝缘膜的方法，其能够抑制在硅衬底上形成的氧化硅膜的自发生长和由暴露于大气中引起的膜的厚度增加。 在允许具有预定厚度的二氧化硅层在硅晶体的表面上生长之后，二氧化硅的表面暴露于不含羟基的有机气体或暴露于氨气中。

公开(公告)号：US4914104A

公开(公告)日：1990-04-03

申请号：US294905

申请日：1989-01-04

Applicant: Tsutomu Irikura ,  Seigo Suzue ,  Hiroaki Uchida ,  Hirotaka Shinoda ,  Satoshi Murayama ,  Susumu Kinoshita

Inventor： Tsutomu Irikura ,  Seigo Suzue ,  Hiroaki Uchida ,  Hirotaka Shinoda ,  Satoshi Murayama ,  Susumu Kinoshita

IPC: A61K31/505 ,  A61P31/04 ,  A61P31/10 ,  C07D333/38 ,  C07D401/12 ,  C07D405/12 ,  C07D409/12 ,  C07D413/12 ,  C07D487/04

CPC classification number: C07D401/12 ,  C07D333/38 ,  C07D405/12 ,  C07D409/12 ,  C07D413/12 ,  C07D487/04

Abstract: This invention relates to a novel imidazo[1,5-a]pyrimidine derivatives and process for their preparation.Moreover, it relates to novel imidazo[1,5-a]pyrimidine derivatives and salts thereof having antifungal activities, and process for their preparation.

Abstract translation: 本发明涉及一种新的咪唑并[1,5-a]嘧啶衍生物及其制备方法。 此外，它涉及具有抗真菌活性的新型咪唑并[1,5-a]嘧啶衍生物及其盐及其制备方法。