发明授权
- 专利标题: Method for treating substrates and films with photoexcitation
- 专利标题(中): 用光激发处理底物和膜的方法
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申请号: US11157567申请日: 2005-06-21
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公开(公告)号: US07601652B2公开(公告)日: 2009-10-13
- 发明人: Kaushal K. Singh , Sean M. Seutter , Jacob Smith , R. Suryanarayanan Iyer , Steve G. Ghanayem , Adam Brailove , Robert Shydo , Jeannot Morin
- 申请人: Kaushal K. Singh , Sean M. Seutter , Jacob Smith , R. Suryanarayanan Iyer , Steve G. Ghanayem , Adam Brailove , Robert Shydo , Jeannot Morin
- 申请人地址: US CA Santa Clara
- 专利权人: Applied Materials, Inc.
- 当前专利权人: Applied Materials, Inc.
- 当前专利权人地址: US CA Santa Clara
- 代理机构: Patterson & Sheridan, LLP
- 主分类号: H01L21/31
- IPC分类号: H01L21/31
摘要:
Embodiments of the invention generally provide a method for depositing films using photoexcitation. The photoexcitation may be utilized for at least one of treating the substrate prior to deposition, treating substrate and/or gases during deposition, treating a deposited film, or for enhancing chamber cleaning. In one embodiment, a method for depositing silicon and nitrogen-containing film on a substrate includes heating a substrate disposed in a processing chamber, generating a beam of energy of between about 1 to about 10 eV, transferring the energy to a surface of the substrate; flowing a nitrogen-containing chemical into the processing chamber, flowing a silicon-containing chemical with silicon-nitrogen bonds into the processing chamber, and depositing a silicon and nitrogen-containing film on the substrate.