公开(公告)号：US20110187082A1

公开(公告)日：2011-08-04

申请号：US13018642

申请日：2011-02-01

申请人： Jeannot Morin

发明人： Jeannot Morin

IPC分类号： A63C9/00

CPC分类号： A63C9/00 ,  A63C9/006 ,  A63C9/0807

摘要： A slope compensation mechanism for automatically adapting an angle between a ski boot and a ski to a slope, including a tower mechanism having a tower base assembly mounted to the ski and a tower pivot mechanism rotatably and slidably mounted to the tower base assembly. A resilient pivot mechanism allows the tower pivot mechanism to rotate and to axially move with respect to the tower base assembly and a boot mounting beam engages with elevation angle catches corresponding to ranges of angles of a slope. A slope angle adaptation mechanism acting between the tower base assembly and the tower pivot mechanism determines a slope index angle corresponding to a slope being traversed and maintains the tower pivot mechanism at the slope index angle.

摘要翻译： 一种用于将滑雪靴和滑雪板之间的角度自动适应于斜坡的斜坡补偿机构，包括具有安装到滑雪板上的塔架组件的塔式机构和可转动地并可滑动地安装在塔底组件上的塔架枢转机构。 弹性枢转机构允许塔架枢转机构相对于塔架基座组件旋转并且轴向移动，并且机架安装梁与对应于斜坡角度的范围的仰角卡爪接合。 作用在塔架基座组件和塔架枢轴机构之间的倾斜角适配机构确定对应于所穿过的斜坡的倾斜角度角度，并将塔架枢转机构保持在倾斜角度。

公开(公告)号：US20060286819A1

公开(公告)日：2006-12-21

申请号：US11157533

申请日：2005-06-21

申请人： Sean Seutter ,  Kaushal Singh ,  Jacob Smith ,  R. Iyer ,  Steve Ghanayem ,  Adam Brailove ,  Robert Shydo ,  Jeannot Morin

发明人： Sean Seutter ,  Kaushal Singh ,  Jacob Smith ,  R. Iyer ,  Steve Ghanayem ,  Adam Brailove ,  Robert Shydo ,  Jeannot Morin

IPC分类号： H01L21/31

CPC分类号： H01L21/0217 ,  C23C16/02 ,  C23C16/345 ,  C23C16/482 ,  C23C16/56 ,  H01L21/0228 ,  H01L21/3185

摘要： Embodiments of the invention generally provide a method for depositing films using photoexcitation. The photoexcitation may be utilized for at least one of treating the substrate prior to deposition, treating substrate and/or gases during deposition, treating a deposited film, or for enhancing chamber cleaning. In one embodiment, a method for depositing silicon and nitrogen-containing film on a substrate includes heating a substrate disposed in a processing chamber, generating a beam of energy of between about 1 to about 10 eV, transferring the energy to a surface of the substrate; flowing a nitrogen-containing chemical into the processing chamber, flowing a silicon-containing chemical with silicon-nitrogen bonds into the processing chamber, and depositing a silicon and nitrogen-containing film on the substrate.

摘要翻译： 本发明的实施方案通常提供使用光激发沉积膜的方法。 光致激发可以用于在沉积之前处理衬底，在沉积期间处理衬底和/或气体，处理沉积膜或用于增强腔室清洁中的至少一种。 在一个实施例中，用于在衬底上沉积硅和含氮膜的方法包括加热设置在处理室中的衬底，产生约1至约10eV的能量束，将能量转移到衬底的表面 ; 使含氮化学物质流入处理室，使含有硅 - 氮的键的含硅化学物质流入处理室，并在衬底上沉积含硅和氮的膜。

公开(公告)号：US08398110B2

公开(公告)日：2013-03-19

申请号：US13018642

申请日：2011-02-01

申请人： Jeannot Morin

发明人： Jeannot Morin

IPC分类号： A63C9/00

CPC分类号： A63C9/00 ,  A63C9/006 ,  A63C9/0807

摘要： A slope compensation mechanism for automatically adapting an angle between a ski boot and a ski to a slope, including a tower mechanism having a tower base assembly mounted to the ski and a tower pivot mechanism rotatably and slidably mounted to the tower base assembly. A resilient pivot mechanism allows the tower pivot mechanism to rotate and to axially move with respect to the tower base assembly and a boot mounting beam engages with elevation angle catches corresponding to ranges of angles of a slope. A slope angle adaptation mechanism acting between the tower base assembly and the tower pivot mechanism determines a slope index angle corresponding to a slope being traversed and maintains the tower pivot mechanism at the slope index angle.

摘要翻译： 一种用于将滑雪靴和滑雪板之间的角度自动适应于斜坡的斜坡补偿机构，包括具有安装到滑雪板上的塔架组件的塔式机构和可转动地并可滑动地安装在塔底组件上的塔架枢转机构。 弹性枢转机构允许塔架枢转机构相对于塔架基座组件旋转并且轴向移动，并且机架安装梁与对应于斜面角度范围的仰角卡扣接合。 作用在塔架基座组件和塔架枢轴机构之间的倾斜角适配机构确定对应于所穿过的斜坡的倾斜角度角度，并将塔架枢转机构保持在倾斜角度。

公开(公告)号：US07601652B2

公开(公告)日：2009-10-13

申请号：US11157567

申请日：2005-06-21

申请人： Kaushal K. Singh ,  Sean M. Seutter ,  Jacob Smith ,  R. Suryanarayanan Iyer ,  Steve G. Ghanayem ,  Adam Brailove ,  Robert Shydo ,  Jeannot Morin

发明人： Kaushal K. Singh ,  Sean M. Seutter ,  Jacob Smith ,  R. Suryanarayanan Iyer ,  Steve G. Ghanayem ,  Adam Brailove ,  Robert Shydo ,  Jeannot Morin

IPC分类号： H01L21/31

CPC分类号： H01L21/0217 ,  C23C16/0227 ,  C23C16/345 ,  C23C16/45519 ,  C23C16/45591 ,  C23C16/482 ,  C23C16/488 ,  C23C16/52 ,  H01L21/0228 ,  H01L21/3185

摘要： Embodiments of the invention generally provide a method for depositing films using photoexcitation. The photoexcitation may be utilized for at least one of treating the substrate prior to deposition, treating substrate and/or gases during deposition, treating a deposited film, or for enhancing chamber cleaning. In one embodiment, a method for depositing silicon and nitrogen-containing film on a substrate includes heating a substrate disposed in a processing chamber, generating a beam of energy of between about 1 to about 10 eV, transferring the energy to a surface of the substrate; flowing a nitrogen-containing chemical into the processing chamber, flowing a silicon-containing chemical with silicon-nitrogen bonds into the processing chamber, and depositing a silicon and nitrogen-containing film on the substrate.

摘要翻译： 本发明的实施方案通常提供使用光激发沉积膜的方法。 光致激发可以用于在沉积之前处理衬底，在沉积期间处理衬底和/或气体，处理沉积膜或用于增强腔室清洁中的至少一种。 在一个实施例中，用于在衬底上沉积硅和含氮膜的方法包括加热设置在处理室中的衬底，产生约1至约10eV的能量束，将能量转移到衬底的表面 ; 使含氮化学物质流入处理室，使含有硅 - 氮的键的含硅化学物质流入处理室，并在衬底上沉积含硅和氮的膜。

公开(公告)号：US20060286820A1

公开(公告)日：2006-12-21

申请号：US11157567

申请日：2005-06-21

申请人： Kaushal Singh ,  Sean Seutter ,  Jacob Smith ,  R. Iyer ,  Steve Ghanayem ,  Adam Brailove ,  Robert Shydo ,  Jeannot Morin

发明人： Kaushal Singh ,  Sean Seutter ,  Jacob Smith ,  R. Iyer ,  Steve Ghanayem ,  Adam Brailove ,  Robert Shydo ,  Jeannot Morin

IPC分类号： H01L21/31

CPC分类号： H01L21/0217 ,  C23C16/0227 ,  C23C16/345 ,  C23C16/45519 ,  C23C16/45591 ,  C23C16/482 ,  C23C16/488 ,  C23C16/52 ,  H01L21/0228 ,  H01L21/3185

摘要： Embodiments of the invention generally provide a method for depositing films using photoexcitation. The photoexcitation may be utilized for at least one of treating the substrate prior to deposition, treating substrate and/or gases during deposition, treating a deposited film, or for enhancing chamber cleaning. In one embodiment, a method for depositing silicon and nitrogen-containing film on a substrate includes heating a substrate disposed in a processing chamber, generating a beam of energy of between about 1 to about 10 eV, transferring the energy to a surface of the substrate; flowing a nitrogen-containing chemical into the processing chamber, flowing a silicon-containing chemical with silicon-nitrogen bonds into the processing chamber, and depositing a silicon and nitrogen-containing film on the substrate.