发明授权
US07601661B2 Indium oxide-tin oxide powder and sputtering target using the same
失效
氧化铟锡氧化物粉末和使用其的溅射靶
- 专利标题: Indium oxide-tin oxide powder and sputtering target using the same
- 专利标题(中): 氧化铟锡氧化物粉末和使用其的溅射靶
-
申请号: US10584709申请日: 2004-12-24
-
公开(公告)号: US07601661B2公开(公告)日: 2009-10-13
- 发明人: Seiichiro Takahashi , Hiroshi Watanabe
- 申请人: Seiichiro Takahashi , Hiroshi Watanabe
- 申请人地址: JP Tokyo
- 专利权人: Mitsui Mining & Smelting Co., Ltd.
- 当前专利权人: Mitsui Mining & Smelting Co., Ltd.
- 当前专利权人地址: JP Tokyo
- 代理机构: Sughrue Mion, PLLC
- 优先权: JP2003-431585 20031225
- 国际申请: PCT/JP2004/019353 WO 20041224
- 国际公布: WO2005/063628 WO 20050714
- 主分类号: C04B35/453
- IPC分类号: C04B35/453 ; C01G19/02
摘要:
The invention provides an indium oxide-tin oxide powder which can be produced at low cost and which can provide a high-density sputtering target having a prolonged target life, and a sputtering target employing the powder. The indium oxide-tin oxide powder containing an In—Sn oxide as a predominant component is characterized in that the oxide powder contains no compound oxide (In4Sn3O12) detectable through X-ray diffraction and has a SnO2 solid solution amount in In2O3 of 2.3 mass % or more, the SnO2 solid solution amount being calculated from the precipitated SnO2 content (mass %) obtained from the ratio between integral diffraction intensity attributed to In2O3 (222) and integral diffraction intensity attributed to SnO2 (110).
公开/授权文献
信息查询
IPC分类: