发明授权
US07601998B2 Semiconductor memory device having metallization comprising select lines, bit lines and word lines
有权
具有包括选择线，位线和字线的金属化的半导体存储器件
- 专利标题： Semiconductor memory device having metallization comprising select lines, bit lines and word lines
- 专利标题（中）： 具有包括选择线，位线和字线的金属化的半导体存储器件
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申请号： US11655115申请日： 2007-01-19
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公开(公告)号： US07601998B2公开(公告)日： 2009-10-13
- 发明人: Young-Chul Jang , Won-Seok Cho , Jae-Hoon Jang , Soon-Moon Jung , Yang-Soo Son , Min-Sung Song
- 申请人： Young-Chul Jang , Won-Seok Cho , Jae-Hoon Jang , Soon-Moon Jung , Yang-Soo Son , Min-Sung Song
- 申请人地址： KR Suwon-si, Gyeonggi-do
- 专利权人： Samsung Electronics Co., Ltd.
- 当前专利权人： Samsung Electronics Co., Ltd.
- 当前专利权人地址： KR Suwon-si, Gyeonggi-do
- 代理机构： Lee & Morse, P.C.
- 优先权： KR10-2006-0089316 20060914
- 主分类号： H01L29/80
- IPC分类号： H01L29/80
摘要：
A semiconductor device includes a semiconductor substrate including a first region having a cell region and a second region having a peripheral circuit region, first transistors on the semiconductor substrate, a first protective layer covering the first transistors, a first insulation layer on the first protective layer, a semiconductor pattern on the first insulation layer in the first region, second transistors on the semiconductor pattern, a second protective layer covering the second transistors, the second protective layer having a thickness greater than that of the first protective layer, and a second insulation layer on the second protective layer and the first insulation layer of the second region.
公开/授权文献
- US20080067517A1 Semiconductor device and method for forming the same 公开/授权日：2008-03-20
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