发明授权
US07602111B2 Plasma accelerating apparatus and plasma processing system including secondary electron amplification coating layer formed at inner wall of channel 有权
等离子体加速装置和等离子体处理系统,包括在通道内壁形成的二次电子放大涂层

  • 专利标题: Plasma accelerating apparatus and plasma processing system including secondary electron amplification coating layer formed at inner wall of channel
  • 专利标题(中): 等离子体加速装置和等离子体处理系统,包括在通道内壁形成的二次电子放大涂层
  • 申请号: US11406341
    申请日: 2006-04-19
  • 公开(公告)号: US07602111B2
    公开(公告)日: 2009-10-13
  • 发明人: Won-tae Lee
  • 申请人: Won-tae Lee
  • 申请人地址: KR Suwon-si
  • 专利权人: Samsung Electronics Co., Ltd.
  • 当前专利权人: Samsung Electronics Co., Ltd.
  • 当前专利权人地址: KR Suwon-si
  • 代理机构: Sughrue Mion, PLLC
  • 优先权: KR10-2005-0062782 20050712
  • 主分类号: H01J27/00
  • IPC分类号: H01J27/00 C23C14/00 C23F1/02 H01J7/24
Plasma accelerating apparatus and plasma processing system including secondary electron amplification coating layer formed at inner wall of channel
摘要:
A plasma accelerating apparatus and a plasma processing system having the same are provided. The apparatus includes a channel comprising an inner wall, an outer wall spaced apart from the inner wall by a distance for encircling the inner wall, and an end wall connected to an end of the inner wall and the outer wall to form an outlet port at the other ends of the walls; a gas supply portion to supply a gas to an inside of the channel; and a plasma generating and accelerating portion to supply ionization energy to the gas to generate a plasma beam and to accelerate the generated plasma beam toward the outlet port, wherein a coating layer comprising a first layer composed of a carbon nano tube is formed on at least one of the inner wall, the outer wall, and the end wall of the channel.
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