发明授权
- 专利标题： Semiconductor probe with high resolution resistive tip having doping control layer and method of fabricating the same
- 专利标题（中）： 具有掺杂控制层的高分辨率电阻尖端的半导体探针及其制造方法
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申请号： US11652596申请日： 2007-01-12
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公开(公告)号： US07602202B2公开(公告)日： 2009-10-13
- 发明人: Ju-hwan Jung , Jun-soo Kim , Hyung-cheol Shin , Seung-bum Hong
- 申请人： Ju-hwan Jung , Jun-soo Kim , Hyung-cheol Shin , Seung-bum Hong
- 申请人地址： KR Suwon-si KR Seoul
- 专利权人： Samsung Electronics Co., Ltd.,Seoul National University Industry Foundation
- 当前专利权人： Samsung Electronics Co., Ltd.,Seoul National University Industry Foundation
- 当前专利权人地址： KR Suwon-si KR Seoul
- 代理机构： Sughrue Mion, PLLC
- 优先权： KR10-2006-0003934 20060113
- 主分类号： G01R31/02
- IPC分类号： G01R31/02 ; G01R31/26
摘要：
A semiconductor probe and a method of fabricating the same are provided. The semiconductor probe includes a cantilever doped with first impurities, a resistive tip which protrudes from an end of the cantilever and doped lightly with second impurities, doping control layers formed on both sides of a protruding portion of the resistive tip, and first and second electrode regions formed under the doping control layers and doped heavily with the second impurities.
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