发明授权
- 专利标题: Semiconductor integrated circuit device
- 专利标题(中): 半导体集成电路器件
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申请号: US11953319申请日: 2007-12-10
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公开(公告)号: US07602651B2公开(公告)日: 2009-10-13
- 发明人: Eiichi Makino , Shigeo Ohshima
- 申请人: Eiichi Makino , Shigeo Ohshima
- 申请人地址: JP Tokyo
- 专利权人: Kabushiki Kaisha Toshiba
- 当前专利权人: Kabushiki Kaisha Toshiba
- 当前专利权人地址: JP Tokyo
- 代理机构: Oblon, Spivak, McClelland, Maier & Neustadt, L.L.P.
- 优先权: JP2006-335792 20061213
- 主分类号: G11C16/06
- IPC分类号: G11C16/06
摘要:
This disclosure concerns a device outputting data to the outside comprising a first transistor with a first conductive type which is connected between an output low voltage corresponding to a first logical value and the pad and which connects the output low voltage to the pad when the digital data has the first logical value; a second transistor with a second conductive type which is connected between an output high voltage corresponding to a second logical value and the pad and which connects the output high voltage to the pad when the digital data has the second logical value; and a third transistor with the first conductive type which is connected between the output high voltage and the pad so as to be parallel to the second transistor and which connects the output high voltage to the pad when the digital data has the second logical value.
公开/授权文献
- US20080151640A1 SEMICONDUCTOR INTEGRATED CIRCUIT DEVICE 公开/授权日:2008-06-26
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