发明授权
US07604832B2 Film forming method, film forming apparatus, pattern forming method, and manufacturing method of semiconductor apparatus 失效
成膜方法,成膜装置,图案形成方法以及半导体装置的制造方法

Film forming method, film forming apparatus, pattern forming method, and manufacturing method of semiconductor apparatus
摘要:
There is disclosed a film forming method comprising continuously discharging a solution adjusted so as to spread over a substrate by a given amount to the substrate through a discharge port disposed in a nozzle, moving the nozzle and substrate with respect to each other, and holding the supplied solution onto the substrate to form a liquid film, wherein a distance h between the discharge port of the nozzle and the substrate is set to be not less than 2 mm and to be in a range less than 5×10−5 qγ (mm) given with respect to a surface tension γ (N/m) of the solution, discharge speed q (m/sec) of the solution continuously discharged through the discharge port, and a constant of 5×10−5 (m·sec/N).
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