发明授权
- 专利标题: Film forming method, film forming apparatus, pattern forming method, and manufacturing method of semiconductor apparatus
- 专利标题(中): 成膜方法,成膜装置,图案形成方法以及半导体装置的制造方法
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申请号: US10927155申请日: 2004-08-27
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公开(公告)号: US07604832B2公开(公告)日: 2009-10-20
- 发明人: Shinichi Ito , Tatsuhiko Ema , Kei Hayasaki , Rempei Nakata , Nobuhide Yamada , Katsuya Okumura
- 申请人: Shinichi Ito , Tatsuhiko Ema , Kei Hayasaki , Rempei Nakata , Nobuhide Yamada , Katsuya Okumura
- 申请人地址: JP Tokyo
- 专利权人: Kabushiki Kaisha Toshiba
- 当前专利权人: Kabushiki Kaisha Toshiba
- 当前专利权人地址: JP Tokyo
- 代理机构: Finnegan, Henderson, Farabow, Garrett & Dunner, L.L.P.
- 优先权: JP2002-022382 20020130; JP2002-031911 20020208; JP2002-100516 20020402
- 主分类号: B05D1/02
- IPC分类号: B05D1/02 ; B05D3/12
摘要:
There is disclosed a film forming method comprising continuously discharging a solution adjusted so as to spread over a substrate by a given amount to the substrate through a discharge port disposed in a nozzle, moving the nozzle and substrate with respect to each other, and holding the supplied solution onto the substrate to form a liquid film, wherein a distance h between the discharge port of the nozzle and the substrate is set to be not less than 2 mm and to be in a range less than 5×10−5 qγ (mm) given with respect to a surface tension γ (N/m) of the solution, discharge speed q (m/sec) of the solution continuously discharged through the discharge port, and a constant of 5×10−5 (m·sec/N).
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