发明授权
- 专利标题： Semiconductor device and a method of manufacturing a semiconductor device
- 专利标题（中）： 半导体装置及其制造方法
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申请号： US11782150申请日： 2007-07-24
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公开(公告)号： US07605011B2公开(公告)日： 2009-10-20
- 发明人: Rakesh Roshan , Brendan Poole , Stewart Edward Hooper , Jonathan Heffernan
- 申请人： Rakesh Roshan , Brendan Poole , Stewart Edward Hooper , Jonathan Heffernan
- 申请人地址： JP Osaka
- 专利权人： Sharp Kabushiki Kaisha
- 当前专利权人： Sharp Kabushiki Kaisha
- 当前专利权人地址： JP Osaka
- 代理机构： Renner, Otto, Boisselle & Sklar, LLP
- 优先权： GB0307555.3 20030402
- 主分类号： H01L21/00
- IPC分类号： H01L21/00
摘要：
A semiconductor device comprises an active region (4), a cladding layer (5,7), and a saturable absorbing layer (6) disposed within the cladding layer. The saturable absorbing layer comprises at least one portion (11a) that is absorbing for light emitted by the active region and comprises at least portion (11b) that is not absorbing for light emitted by the active region.The fabrication method of the invention enables the non-absorbing portion(s) (11b) of the saturable absorbing layer (6) to produced after the device structure has been fabricated. This allows the degree of overlap between the non-absorbing portion(s) (11b) of the saturable absorbing layer (6) and the optical mode of the laser to be altered after the device has been grown.
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