发明授权
US07605414B2 MOS transistors having low-resistance salicide gates and a self-aligned contact between them
有权
具有低电阻自对准栅极的MOS晶体管和它们之间的自对准接触
- 专利标题： MOS transistors having low-resistance salicide gates and a self-aligned contact between them
- 专利标题（中）： 具有低电阻自对准栅极的MOS晶体管和它们之间的自对准接触
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申请号： US11042276申请日： 2005-01-24
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公开(公告)号： US07605414B2公开(公告)日： 2009-10-20
- 发明人: Henry Wei-Ming Chung
- 申请人： Henry Wei-Ming Chung
- 申请人地址： TW Hsinchu
- 专利权人： Macronix International Co., Ltd.
- 当前专利权人： Macronix International Co., Ltd.
- 当前专利权人地址： TW Hsinchu
- 代理机构： Stout, Uxa, Buyan & Mullins, LLP
- 主分类号： H01L29/76
- IPC分类号： H01L29/76
摘要：
A method for forming a self-aligned contact between two MOS transistors is described. The method supports the use of low-resistivity suicides for the formation of contacts in nanometer applications that employ polycide techniques. Silicon nitride and photoresist material act as dual masks in the formation of the self-aligned contact.