Invention Grant
- Patent Title: Semiconductor structure with RF element
- Patent Title (中): 具有RF元件的半导体结构
-
Application No.: US11157300Application Date: 2005-06-20
-
Publication No.: US07607586B2Publication Date: 2009-10-27
- Inventor: Chih-Hsin Wang
- Applicant: Chih-Hsin Wang
- Applicant Address: US CA San Jose
- Assignee: R828 LLC
- Current Assignee: R828 LLC
- Current Assignee Address: US CA San Jose
- Agency: Patent Law Group LLP
- Agent Carmen C. Cook
- Main IPC: G06K19/06
- IPC: G06K19/06

Abstract:
A RF structure including a semiconductor chip with an RF element having an RF core with two electrically connected chip pads, including a chip carrier having two carrier pads connected to the two chip pads and including an antenna connected to the carrier pads and electrically connected to the chip pads and to the RF core. The antenna is formed of wires, printed conductors, seal rings or other structures on, below or above the top plane of the semiconductor chip. A primary element is provided where the RF element is a secondary element. The primary element occupies a primary region and the RF core of the secondary element occupies a secondary region where the secondary region is much smaller than the primary region. The RF core secondary region is formed with the same native processing as used for the primary element.
Public/Granted literature
- US20060214798A1 Semiconductor structure with RF element Public/Granted day:2006-09-28
Information query