High aspect ratio contacts

Invention Grant

US07608195B2 High aspect ratio contacts 有权

Title translation: 高宽比接触

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Patent Title: High aspect ratio contacts
Patent Title (中): 高宽比接触
Application No.: US11358659

Application Date: 2006-02-21
Publication No.: US07608195B2

Publication Date: 2009-10-27
Inventor: Aaron R. Wilson
Applicant: Aaron R. Wilson
Applicant Address: US ID Boise
Assignee: Micron Technology, Inc.
Current Assignee: Micron Technology, Inc.
Current Assignee Address: US ID Boise
Agency: Brooks, Cameron & Huebsch, PLLC
Main IPC: H01L21/302
IPC: H01L21/302

Abstract:

A process for etching a insulating layer to produce an opening having an aspect ratio of at least 15:1 by supplying a first gaseous etchant having at least fifty (50) percent He to a plasma etch reactor, and exposing the insulating layer to a plasma of the first gaseous etchant. Use of the first gaseous etchant reduces the occurrence of twisting in openings in insulating layers having an aspect ratio of at least 15:1.

Abstract(Chinese):

通过向等离子体蚀刻反应器提供具有至少五十（50）％的He的第一气态蚀刻剂，并且将绝缘层暴露于等离子体中，蚀刻绝缘层以产生纵横比为至少15:1的开口的方法的第一种气体蚀刻剂。使用第一种气体蚀刻剂减少了具有至少15:1的纵横比的绝缘层中的开口扭曲的发生。

Public/Granted literature

US20070197033A1 High aspect ratio contacts Public/Granted day:2007-08-23

Information query

Espacenet

IPC分类:

H	电学
H01	基本电气元件
H01L	半导体器件；其他类目中不包括的电固体器件（使用半导体器件的测量入G01；一般电阻器入H01C；磁体、电感器、变压器入H01F；一般电容器入H01G；电解型器件入H01G9/00；电池组、蓄电池入H01M；波导管、谐振器或波导型线路入H01P；线路连接器、汇流器入H01R；受激发射器件入H01S；机电谐振器入H03H；扬声器、送话器、留声机拾音器或类似的声机电传感器入H04R；一般电光源入H05B；印刷电路、混合电路、电设备的外壳或结构零部件、电气元件的组件的制造入H05K；在具有特殊应用的电路中使用的半导体器件见应用相关的小类）
H01L21/00	专门适用于制造或处理半导体或固体器件或其部件的方法或设备
H01L21/02	.半导体器件或其部件的制造或处理
H01L21/04	..至少具有一个跃变势垒或表面势垒的器件，例如PN结、耗尽层、载体集结层
H01L21/18	...器件有由周期表Ⅳ族元素或含有/不含有杂质的AⅢBⅤ族化合物构成的半导体，如掺杂材料
H01L21/30	....用H01L21/20至H01L21/26各组不包含的方法或设备处理半导体材料的（在半导体材料上制作电极的入H01L21/28）
H01L21/302	.....改变半导体材料的表面物理特性或形状的，例如腐蚀、抛光、切割