发明授权
- 专利标题： Method of manufacturing semiconductor device
- 专利标题（中）： 制造半导体器件的方法
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申请号： US12003802申请日： 2008-01-02
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公开(公告)号： US07608498B2公开(公告)日： 2009-10-27
- 发明人: Takuya Kobayashi , Katsuyuki Sekine , Tomonori Aoyama , Hiroshi Tomita
- 申请人： Takuya Kobayashi , Katsuyuki Sekine , Tomonori Aoyama , Hiroshi Tomita
- 申请人地址： JP Tokyo
- 专利权人： Kabushiki Kaisha Toshiba
- 当前专利权人： Kabushiki Kaisha Toshiba
- 当前专利权人地址： JP Tokyo
- 代理机构： Finnegan, Henderson, Farabow, Garrett & Dunner, L.L.P.
- 优先权： JP2005-308564 20051024; JP2006-052166 20060228
- 主分类号： H01L21/336
- IPC分类号： H01L21/336
摘要：
A method of manufacturing a semiconductor device includes forming a trench in an interlayer dielectric film on the semiconductor substrate, the trench reaching a semiconductor substrate and having a sidewall made of silicon nitride film; depositing a gate insulation film made of a HfSiO film at a temperature within a range of 200 degrees centigrade to 260 degrees centigrade, so that the HfSiO film is deposited on the semiconductor substrate which is exposed at a bottom surface of the trench without depositing the HfSiO film on the silicon nitride film; and filling the trench with a gate electrode made of metal.
公开/授权文献
- US20080182396A1 Method of manufacturing semiconductor device 公开/授权日：2008-07-31
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