发明授权
- 专利标题： Memory and manufacturing method thereof
- 专利标题（中）： 其记忆及其制造方法
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申请号： US11468311申请日： 2006-08-30
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公开(公告)号： US07608504B2公开(公告)日： 2009-10-27
- 发明人: Chien-Hung Liu , Shou-Wei Huang , Ying-Tso Chen , Yu-Tsung Lin
- 申请人： Chien-Hung Liu , Shou-Wei Huang , Ying-Tso Chen , Yu-Tsung Lin
- 申请人地址： TW Hsinchu
- 专利权人： Macronix International Co., Ltd.
- 当前专利权人： Macronix International Co., Ltd.
- 当前专利权人地址： TW Hsinchu
- 代理机构： Thomas, Kayden, Horstemeyer & Risley
- 主分类号： H01L21/00
- IPC分类号： H01L21/00
摘要：
A memory is provided. The memory includes a substrate, a number of parallel bit lines, a number of parallel word lines and at least a oxide-nitride-oxide (ONO) structure. The bit lines are disposed in the substrate. The word lines are disposed on the substrate. The word lines are crossed with but not perpendicular to the bit lines. The ONO structure is disposed between the word lines and the substrate.
公开/授权文献
- US20080054322A1 MEMORY AND MANUFACTURING METHOD THEREOF 公开/授权日：2008-03-06
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