发明授权
- 专利标题: NAND flash memory devices and methods of fabricating the same
- 专利标题(中): NAND闪存器件及其制造方法
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申请号: US12216393申请日: 2008-07-03
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公开(公告)号: US07608507B2公开(公告)日: 2009-10-27
- 发明人: Ji-Hwon Lee , Sung-Hoi Hur
- 申请人: Ji-Hwon Lee , Sung-Hoi Hur
- 申请人地址: KR Gyeonggi-do
- 专利权人: Samsung Electronics Co., Ltd.
- 当前专利权人: Samsung Electronics Co., Ltd.
- 当前专利权人地址: KR Gyeonggi-do
- 代理机构: Harness, Dickey & Pierce, P.L.C.
- 优先权: KR10-2005-0078813 20050826
- 主分类号: H01L21/336
- IPC分类号: H01L21/336
摘要:
A NAND includes a device isolation pattern disposed in a region of a substrate defining a plurality of active regions. Memory transistors having memory gate patterns, constituting a cell string, cross the plurality of active regions. Select transistors are disposed over the memory transistors, and lower plugs are disposed on each side of the cell string to electrically connect the plurality of active regions on both sides of the cell string and the select transistors.