公开(公告)号：US07391071B2

公开(公告)日：2008-06-24

申请号：US11233857

申请日：2005-09-23

申请人： Min-Cheol Park ,  Sung-Hoi Hur ,  Jung-Dal Choi ,  Ji-Hwon Lee

发明人： Min-Cheol Park ,  Sung-Hoi Hur ,  Jung-Dal Choi ,  Ji-Hwon Lee

IPC分类号： H01L29/76 ,  H01L21/336

CPC分类号： H01L27/11521 ,  H01L27/115 ,  H01L29/42336 ,  H01L29/7883

摘要： A nonvolatile memory device includes a semiconductor substrate, a device isolation layer, a tunnel insulation layer, a floating gate, a buried floating gate, and a control gate. A trench is in the substrate that defines an active region of the substrate adjacent to the trench. A device isolation layer is on the substrate along the trench. A tunnel insulation layer is on the active region of the substrate. A floating gate is on the tunnel insulation layer opposite to the active region of the substrate. A buried floating gate is on the device isolation layer in the trench. An intergate dielectric layer is on and extends across the floating gate and the buried floating gate. A control gate is on the intergate dielectric layer and extends across the floating gate and the buried floating gate.

摘要翻译： 非易失性存储器件包括半导体衬底，器件隔离层，隧道绝缘层，浮置栅极，埋入浮栅和控制栅极。 衬底中的沟槽限定邻近沟槽的衬底的有源区。 器件隔离层沿着沟槽在衬底上。 隧道绝缘层位于衬底的有源区上。 浮动栅极位于与衬底的有源区相对的隧道绝缘层上。 埋置的浮动栅极位于沟槽中的器件隔离层上。 隔间电介质层在浮栅和埋入浮栅之间并且延伸。 控制栅极位于隔间电介质层上，并跨越浮置栅极和埋入浮栅。

公开(公告)号：US07608507B2

公开(公告)日：2009-10-27

申请号：US12216393

申请日：2008-07-03

申请人： Ji-Hwon Lee ,  Sung-Hoi Hur

发明人： Ji-Hwon Lee ,  Sung-Hoi Hur

IPC分类号： H01L21/336

CPC分类号： H01L27/115 ,  H01L27/11519 ,  H01L27/11521 ,  H01L27/11524 ,  H01L27/11568

摘要： A NAND includes a device isolation pattern disposed in a region of a substrate defining a plurality of active regions. Memory transistors having memory gate patterns, constituting a cell string, cross the plurality of active regions. Select transistors are disposed over the memory transistors, and lower plugs are disposed on each side of the cell string to electrically connect the plurality of active regions on both sides of the cell string and the select transistors.

摘要翻译： NAND包括设置在限定多个有源区的衬底的区域中的器件隔离图案。 具有构成单元串的存储器栅极图案的存储晶体管跨过多个有源区。 选择晶体管设置在存储晶体管的上方，并且下部插头设置在单元串的每一侧，以电连接单元串和选择晶体管的两侧上的多个有源区。

公开(公告)号：US20070048922A1

公开(公告)日：2007-03-01

申请号：US11509007

申请日：2006-08-24

申请人： Ji-Hwon Lee ,  Sung-Hoi Hur

发明人： Ji-Hwon Lee ,  Sung-Hoi Hur

IPC分类号： H01L21/8238

CPC分类号： H01L27/115 ,  H01L27/11519 ,  H01L27/11521 ,  H01L27/11524 ,  H01L27/11568

摘要： A NAND includes a device isolation pattern disposed in a region of a substrate defining a plurality of active regions. Memory transistors having memory gate patterns, constituting a cell string, cross the plurality of active regions. Select transistors are disposed over the memory transistors, and lower plugs are disposed on each side of the cell string to electrically connect the plurality of active regions on both sides of the cell string and the select transistors.

摘要翻译： NAND包括设置在限定多个有源区的衬底的区域中的器件隔离图案。 具有构成单元串的存储器栅极图案的存储晶体管跨过多个有源区。 选择晶体管设置在存储晶体管的上方，并且下部插头设置在单元串的每一侧，以电连接单元串和选择晶体管的两侧上的多个有源区。

公开(公告)号：US20080268595A1

公开(公告)日：2008-10-30

申请号：US12216393

申请日：2008-07-03

申请人： Ji-Hwon Lee ,  Sung-Hoi Hur

发明人： Ji-Hwon Lee ,  Sung-Hoi Hur

IPC分类号： H01L21/8247

CPC分类号： H01L27/115 ,  H01L27/11519 ,  H01L27/11521 ,  H01L27/11524 ,  H01L27/11568

摘要： A NAND includes a device isolation pattern disposed in a region of a substrate defining a plurality of active regions. Memory transistors having memory gate patterns, constituting a cell string, cross the plurality of active regions. Select transistors are disposed over the memory transistors, and lower plugs are disposed on each side of the cell string to electrically connect the plurality of active regions on both sides of the cell string and the select transistors.

摘要翻译： NAND包括设置在限定多个有源区的衬底的区域中的器件隔离图案。 具有构成单元串的存储器栅极图案的存储晶体管跨过多个有源区。 选择晶体管设置在存储晶体管的上方，并且下部插头设置在单元串的每一侧，以电连接单元串和选择晶体管的两侧上的多个有源区。

公开(公告)号：US07411239B2

公开(公告)日：2008-08-12

申请号：US11509007

申请日：2006-08-24

申请人： Ji-Hwon Lee ,  Sung-Hoi Hur

发明人： Ji-Hwon Lee ,  Sung-Hoi Hur

IPC分类号： H01L27/108

CPC分类号： H01L27/115 ,  H01L27/11519 ,  H01L27/11521 ,  H01L27/11524 ,  H01L27/11568

摘要： A NAND includes a device isolation pattern disposed in a region of a substrate defining a plurality of active regions. Memory transistors having memory gate patterns, constituting a cell string, cross the plurality of active regions. Select transistors are disposed over the memory transistors, and lower plugs are disposed on each side of the cell string to electrically connect the plurality of active regions on both sides of the cell string and the select transistors.

摘要翻译： NAND包括设置在限定多个有源区的衬底的区域中的器件隔离图案。 具有构成单元串的存储器栅极图案的存储晶体管跨过多个有源区。 选择晶体管设置在存储晶体管的上方，并且下部插头设置在单元串的每一侧，以电连接单元串和选择晶体管的两侧上的多个有源区。

公开(公告)号：US20070063257A1

公开(公告)日：2007-03-22

申请号：US11518724

申请日：2006-09-11

申请人： Sung-Hoi Hur ,  Young-Min Park ,  Sang-Bin Song ,  Min-Cheol Park ,  Ji-Hwon Lee ,  Su-Youn Yi ,  Jang-Min Yoo

发明人： Sung-Hoi Hur ,  Young-Min Park ,  Sang-Bin Song ,  Min-Cheol Park ,  Ji-Hwon Lee ,  Su-Youn Yi ,  Jang-Min Yoo

IPC分类号： H01L29/788 ,  H01L21/8238

CPC分类号： H01L29/7887 ,  H01L27/105 ,  H01L27/115 ,  H01L27/11526 ,  H01L27/11529

摘要： High-voltage MOS transistors with a floated drain-side auxiliary gate are provided. The high-voltage MOS transistors include a source region and a drain region provided in a semiconductor substrate. A main gate electrode is disposed over the semiconductor substrate between the drain region and the source region. A lower drain-side auxiliary gate and an upper drain-side auxiliary gate are sequentially stacked over the semiconductor substrate between the main gate electrode and the drain region. The lower drain-side auxiliary gate is electrically insulated from the semiconductor substrate, the main gate electrode and the upper drain-side auxiliary gate. Methods of fabricating the high-voltage MOS transistors are also provided.

摘要翻译： 提供了具有浮置漏极侧辅助栅极的高压MOS晶体管。 高压MOS晶体管包括设置在半导体衬底中的源极区域和漏极区域。 主栅极设置在漏区和源区之间的半导体衬底之上。 下侧漏极侧辅助栅极和上部漏极侧辅助栅极依次堆叠在主栅极和漏极区域之间的半导体衬底上。 下漏极侧辅助栅极与半导体基板，主栅电极和上漏极侧辅助栅极电绝缘。 还提供了制造高压MOS晶体管的方法。

公开(公告)号：US07696556B2

公开(公告)日：2010-04-13

申请号：US11518724

申请日：2006-09-11

申请人： Sung-Hoi Hur ,  Young-Min Park ,  Sang-Bin Song ,  Min-Cheol Park ,  Ji-Hwon Lee ,  Su-Youn Yi ,  Jang-Min Yoo

发明人： Sung-Hoi Hur ,  Young-Min Park ,  Sang-Bin Song ,  Min-Cheol Park ,  Ji-Hwon Lee ,  Su-Youn Yi ,  Jang-Min Yoo

IPC分类号： H01L29/788 ,  H01L21/8238

CPC分类号： H01L29/7887 ,  H01L27/105 ,  H01L27/115 ,  H01L27/11526 ,  H01L27/11529

摘要： High-voltage MOS transistors with a floated drain-side auxiliary gate are provided. The high-voltage MOS transistors include a source region and a drain region provided in a semiconductor substrate. A main gate electrode is disposed over the semiconductor substrate between the drain region and the source region. A lower drain-side auxiliary gate and an upper drain-side auxiliary gate are sequentially stacked over the semiconductor substrate between the main gate electrode and the drain region. The lower drain-side auxiliary gate is electrically insulated from the semiconductor substrate, the main gate electrode and the upper drain-side auxiliary gate. Methods of fabricating the high-voltage MOS transistors are also provided.

摘要翻译： 提供了具有浮置漏极侧辅助栅极的高压MOS晶体管。 高压MOS晶体管包括设置在半导体衬底中的源极区域和漏极区域。 主栅极设置在漏区和源区之间的半导体衬底之上。 下侧漏极侧辅助栅极和上部漏极侧辅助栅极依次堆叠在主栅极和漏极区域之间的半导体衬底上。 下漏极侧辅助栅极与半导体基板，主栅电极和上漏极侧辅助栅极电绝缘。 还提供了制造高压MOS晶体管的方法。

公开(公告)号：US20060063331A1

公开(公告)日：2006-03-23

申请号：US11233857

申请日：2005-09-23

申请人： Min-Cheol Park ,  Sung-Hoi Hur ,  Jung-Dal Choi ,  Ji-Hwon Lee

发明人： Min-Cheol Park ,  Sung-Hoi Hur ,  Jung-Dal Choi ,  Ji-Hwon Lee

IPC分类号： H01L21/336 ,  H01L21/3205

CPC分类号： H01L27/11521 ,  H01L27/115 ,  H01L29/42336 ,  H01L29/7883

摘要： A nonvolatile memory device includes a semiconductor substrate, a device isolation layer, a tunnel insulation layer, a floating gate, a buried floating gate, and a control gate. A trench is in the substrate that defines an active region of the substrate adjacent to the trench. A device isolation layer is on the substrate along the trench. A tunnel insulation layer is on the active region of the substrate. A floating gate is on the tunnel insulation layer opposite to the active region of the substrate. A buried floating gate is on the device isolation layer in the trench. An intergate dielectric layer is on and extends across the floating gate and the buried floating gate. A control gate is on the intergate dielectric layer and extends across the floating gate and the buried floating gate.

摘要翻译： 非易失性存储器件包括半导体衬底，器件隔离层，隧道绝缘层，浮置栅极，埋入浮栅和控制栅极。 衬底中的沟槽限定邻近沟槽的衬底的有源区。 器件隔离层沿着沟槽在衬底上。 隧道绝缘层位于衬底的有源区上。 浮动栅极位于与衬底的有源区相对的隧道绝缘层上。 埋置的浮动栅极位于沟槽中的器件隔离层上。 隔间电介质层在浮栅和埋入浮栅之间并且延伸。 控制栅极位于隔间电介质层上，并跨越浮置栅极和埋入浮栅。

公开(公告)号：US20050023600A1

公开(公告)日：2005-02-03

申请号：US10921656

申请日：2004-08-19

申请人： Kwang-Shik Shin ,  Kyu-Charn Park ,  Heung-Kwun Oh ,  Sung-Hoi Hur ,  Sang-Bin Song ,  Jung-Dal Choi

发明人： Kwang-Shik Shin ,  Kyu-Charn Park ,  Heung-Kwun Oh ,  Sung-Hoi Hur ,  Sang-Bin Song ,  Jung-Dal Choi

IPC分类号： H01L21/768 ,  H01L21/8247 ,  H01L27/115 ,  H01L29/78 ,  H01L29/788

CPC分类号： H01L27/11521 ,  H01L21/76802 ,  H01L27/115 ,  H01L27/11524

摘要： NAND-type flash memory devices and methods of fabricating the same are provided. The NAND-type flash memory device includes a plurality of isolation layers running parallel with each other, which are formed at predetermined regions of a semiconductor substrate. This device also includes a string selection line pattern, a plurality of word line patterns and a ground selection line pattern which cross over the isolation layers and active regions between the isolation layers. Source regions are formed in the active regions adjacent to the ground selection line patterns and opposite the string selection line pattern. The source regions and the isolation layers between the source regions are covered with a common source line running parallel with the ground selection line pattern.

摘要翻译： 提供了NAND​​型闪存器件及其制造方法。 NAND型闪速存储器件包括彼此平行延伸的多个隔离层，它们形成在半导体衬底的预定区域。 该装置还包括串联选择线图案，多个字线图案和跨越隔离层和隔离层之间的有源区域的接地选择线图案。 源极区域形成在与地选择线图案相邻的有源区域中并且与串选择线图案相反。 源极区域和源极区域之间的隔离层被与地选择线图案平行延伸的公共源极线覆盖。

公开(公告)号：US06677639B2

公开(公告)日：2004-01-13

申请号：US10188389

申请日：2002-07-01

申请人： Chang-Hyun Lee ,  Jung-Dal Choi ,  Byung-Kwan You ,  Sung-Hoi Hur

发明人： Chang-Hyun Lee ,  Jung-Dal Choi ,  Byung-Kwan You ,  Sung-Hoi Hur

IPC分类号： H01L2976

CPC分类号： H01L27/11568 ,  H01L27/115

摘要： A non-volatile memory device and fabrication method thereof are provided. A floating region is formed on an active region on a substrate. Trenches define the active region. The floating region is made of an ONO layer. A gate electrode is formed on the floating region. A mask is formed on the gate electrode. A thermal oxidation is performed to make a sidewall oxide and a trench oxide on the sidewall of the gate electrode and the trench, respectively. As a result, the widths of the gate electrode and the active region become less than the width of the floating region, thereby forming protrusions at ends of the floating region. Isolation regions are formed in the trenches and include the sidewall oxide and the trench oxide. The isolation regions surround the protrusions. As a result, electric field induced on the sidewall of the floating region is decreased. Moreover, the thermal oxidation cures any damage to the sidewalls of the floating region. Accordingly, leakage current can be substantially suppressed at the boundary region between the isolation region and the floating region.