Invention Grant
US07608540B2 Composition for removing a photoresist, method of preparing the composition, method of removing a photoresist and method of manufacturing a semiconductor device using the composition
失效
用于除去光致抗蚀剂的组合物，制备组合物的方法，去除光致抗蚀剂的方法和使用该组合物制造半导体器件的方法
- Patent Title: Composition for removing a photoresist, method of preparing the composition, method of removing a photoresist and method of manufacturing a semiconductor device using the composition
- Patent Title (中): 用于除去光致抗蚀剂的组合物，制备组合物的方法，去除光致抗蚀剂的方法和使用该组合物制造半导体器件的方法
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Application No.: US11406243Application Date: 2006-04-19
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Publication No.: US07608540B2Publication Date: 2009-10-27
- Inventor: Jung-Dae Park , Pil-Kwon Jun , Myoung-Ok Han , Se-Yeon Kim , Kwang-Shin Lim , Tae-Hyo Choi , Seung-Ki Chae , Yang-Koo Lee
- Applicant: Jung-Dae Park , Pil-Kwon Jun , Myoung-Ok Han , Se-Yeon Kim , Kwang-Shin Lim , Tae-Hyo Choi , Seung-Ki Chae , Yang-Koo Lee
- Applicant Address: KR Suwon-si, Gyeonggi-do
- Assignee: Samsung Electronics Co., Ltd.
- Current Assignee: Samsung Electronics Co., Ltd.
- Current Assignee Address: KR Suwon-si, Gyeonggi-do
- Agency: Volentine & Whitt, PLLC
- Priority: KR10-2005-0051421 20050615
- Main IPC: H01L29/00
- IPC: H01L29/00 ; C11D7/26 ; C11D7/32 ; C11D7/50
Abstract:
A composition for removing a photoresist includes about 5 to about 20 percent by weight of an alcoholamide compound, about 15 to about 60 percent by weight of a polar aprotic solvent, about 0.1 to about 6 percent by weight of an additive, and pure water. The alcoholamide compound is chemically structured as follows: where R1 is a hydroxyl group or a hydroxyalkyl group, and R2 is a hydrogen atom or a hydroxyalkyl group.
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